Abstract:Recent years have seen immense advances in electroluminescent InGaN-based light-emitting diodes (LEDs) that may well revolutionize illumination and flat-screen display technologies. Driven by the need for development of submicron-scale, multicolor light sources monolithically integrated on a single Si chip, it is highly motivated to accurately characterize the size-dependent electroluminescence (EL) properties of selective-area grown (SAG) single InGaN-based nanowire (NW) LEDs grown on Si substrate. Moreover, as InGaN-based planar LEDs generally suffer from the external mechanical compression induced by the packaging processing which could potentially degrade the emission efficiency, thus further driving us to investigate the size-dependent EL properties of single InGaN-based NW LEDs on Si substrates under external mechanical compression. In this work, we aim at opto-electro-mechanical characterization of single InGaN/GaN NWs using SEM-based multi-physical characterization technique. We firstly characterized the size-dependent EL properties of single InGaN/GaN NWs area-selectively grown on Si substrate, with ultra-high injection current density up to 12.99 kA/cm 2 achieved. In addition, the effect of external mechanical compression on the EL properties of single InGaN/GaN NWs was investigated. Stable EL properties (no degradation of EL peak intensity, no peak wavelength shift) and electrical characteristics have been observed by applying 5 μ N compressive force to single multi-diameter InGaN/GaN NWs, indicating no degradation of light output with the applied stress (up to 62.2 MPa) and demonstrating the superior optical and electrical robustness of single InGaN/GaN NW LEDs under external stress.

Boosting the efficiency of InGaN-based green LEDs grown on Si through buffer strain engineering

Efficiency enhancement mechanism of piezoelectric effect in long-wavelength InGaN-based LED

High external quantum efficiency green light emitting diodes on stress-manipulated AlNO buffer layers

Effect of strain relaxation on performance of InGaN/GaN green LEDs grown on 4-inch sapphire substrate with sputtered AlN nucleation layer

Performance Improvement of GaN-based LEDs with Step Stage InGaN/GaN Strain Relief Layers in GaN-based Blue LEDs.

Boosting Green GaInN/GaN Light-Emitting Diode Performance by a GaInN Underlying Layer

Enhanced Light Extraction from a GaN-based Green Light-Emitting Diode with Hemicylindrical Linear Grating Structure.

Improvement in Quantum Efficiency of Green GaN-based Micro-Led by Trapezoidal Quantum Well

High‐Brightness Blue Light‐Emitting Diodes Enabled by a Directly Grown Graphene Buffer Layer

High efficiency InGaN nanowire tunnel junction green micro-LEDs

Performance Improvement of Gan-Based Near-Uv Leds with Ingan/Algan Superlattices Strain Relief Layer and Algan Barrier

Strain‐Modulated Light Emission Properties in a Single InGaN/GaN Multiple‐Quantum‐Well Microwire‐Based Flexible Light‐Emitting Diode

High‐Efficiency InGaN Red Mini‐LEDs on Sapphire Toward Full‐Color Nitride Displays: Effect of Strain Modulation

Improving Performances of Ultra-Small Size (1–20 Μ M) InGaN Red Micro-Leds by Growing on Freestanding GaN Substrates

Effect of the AlN strain compensation layer on InGaN quantum well red-light-emitting diodes beyond epitaxy

Growth modification via indium surfactant for InGaN/GaN green LED

Optically and Electrically Invariant Multi-color Single InGaN/GaN Nanowire Light-emitting Diodes on Silicon Substrate under Mechanical Compression

Performance Improvement of InGaN LEDs by Using Strain Compensated Last Quantum Barrier and Electron Blocking Layer

633-Nm InGaN-based Red LEDs Grown on Thick Underlying GaN Layers with Reduced In-Plane Residual Stress

Improvement of the Emission Intensity of GaN-Based Micro-Light Emitting Diodes by a Suspended Structure

Managing Green Emission in Coupled InGaN QW–QDs Nanostructures Via Nanoengineering