Abstract:Two ultraviolet InGaN/GaN light emitting diodes (LEDs) with and without InGaN underlying layer beneath the multiple quantum wells (MQWs) were grown by metalorganic vapor phase epitaxy. Based on the photoluminescence excitation measurements, it was found that the Stokes shift of the sample with a 10-nm-thick In0.1Ga0.9N underlying layer was about 64 meV, which was smaller than that of the reference sample without InGaN underlying layer, indicating a reduced quantum-confined Stark effect (QCSE) due to the decrease of the piezoelectric polarization field in the MQWs. In addition, by fitting the photon energy dependence of carrier lifetime values, the radiative recombination lifetime of the sample with and without InGaN underlying layer were obtained about 1.22 and 1.58 ns at 10 K, respectively. The shorter carrier lifetime also confirmed that the QCSE in the MQWs was weakened after inserting the InGaN underlying layer. In addition, although the depth of carrier localization in the sample with InGaN underlying layer became smaller, the nonradiative recombination centers (NRCs) inside it decreased, and thus suppressed the nonradiative re-combination process significantly according to the electroluminescence measurement results. Compared to the reference sample, the efficiency droop behavior was delayed in the sample with InGaN underlying layer and the droop effect was also effectively alleviated. Therefore, the enhanced light-emission efficiency of ultraviolet InGaN/GaN MQW LEDs could be attributed to the decrease of QCSE and NRCs.

Boosting Green GaInN/GaN Light-Emitting Diode Performance by a GaInN Underlying Layer

Improvement of Blue Llight-Ight-ight-eeemitting Mitting Ddiodes Iodes with an Undoped Graded Layer As the Electrons Tunneling Barrier Layer

Enhanced Light Extraction from a GaN-based Green Light-Emitting Diode with Hemicylindrical Linear Grating Structure.

Ultra High Luminous Efficiency P-Type Surface Defect Structure GaN LED

Enhanced Device Performance of GaInN‐based Deep Green Light Emitting Diodes with V‐defect‐free Active Region

Improved Performance Of Gainn Based Deep Green Light Emitting Diodes Through V-Defect Reduction

The Influences of Sputtered AlN Buffer Layer on AlInGaN Based Blue and Near‐ultraviolet Light Emitting Diodes

Characterization of GaInN/GaN layers for green emitting laser diodes

Performance Enhancement of AlGaN-based Deep Ultraviolet Light-emitting Diodes with AlxGa1-xN Linear Descending Layers

Enhancement of Light-Emission Efficiency of Ultraviolet InGaN/GaN Multiple Quantum Well Light Emitting Diode with InGaN Underlying Layer

Boosting the efficiency of InGaN-based green LEDs grown on Si through buffer strain engineering

Ingan/Gan Multilayer Quantum Dots Yellow-Green Light-Emitting Diode with Optimized Gan Barriers

Origin of GaN-InGaN-GaN barriers in enhancing the hole injection for InGaN/GaN green light-emitting diodes

Optical Properties of GaN-Based Green Light-Emitting Diodes Influenced by Low-Temperature p-GaN Layer

Improving Performance of Algan‐Based Deep‐Ultraviolet Light‐Emitting Diodes by Inserting a Higher Al‐Content Algan Layer Within the Multiple Quantum Wells

InGaN multiple quantum well based light-emitting diodes with indium composition gradient InGaN quantum barriers

The Influence of InGaN Interlayer on the Performance of InGaN/GaN Quantum-Well-Based LEDs at High Injections

Enhanced Performance of GaN Based Light-Emitting Diodes with a Low Temperature P-Gan Hole Injection Layer

Performance Enhancement of Ingan-Based Light-Emitting Diodes with Ingan/Alinn/Ingan Composition-Graded Barriers

Improvement of Electrostatic Discharge Characteristics of InGaN/GaN MQWs Light-Emitting Diodes by Inserting an N+-Ingan Electron Injection Layer and a P-Ingan/gan Hole Injection Layer

Optical Properties of Ultra-Thin Inn Layer Embedded in Ingan Matrix for Light Emitters