Abstract:Color-mixed (cm) light-emitting diodes (LEDs) are theoretically the most efficient white light emitters, projected to improve white light luminous efficacy by 34% compared to incumbent phosphor converted LEDs. Since white light technology is globally pervasive and essential, small improvements in LED technology can result in energy savings. However, cm-LEDs are not yet realized due to poor efficacy in green and amber emitting materials, a spectral region colloquially referred to as the green gap. ZnGeN2 is nearly isostructural and closely lattice-matched to GaN and can be heteroepitaxially integrated with existing GaN devices; ZnGeN2/GaN hybrid structures are theorized to emit green (∼530 nn) light with a spontaneous emission rate 4.6-4.9 times higher than traditional InGaN LEDs when incorporated into III-N LED structures. In this report we demonstrate the molecular beam epitaxy (MBE) growth of GaN and ZnGeN2 superlattices, an important step towards realizing multiple quantum well structures required for efficient LEDs. Elemental analysis, including atom probe tomography, shows that Ga and Ge are observed in both ZnGeN2 and GaN layers, degrading the structural uniformity. The lack of elemental abruptness also leads to increased defect luminescence and reabsorption of band edge luminescence. The source of unintentional Ga distributed throughout the ZnGeN2 layers was identified as excess flux escaping from around the closed MBE shutter. The source of unintentional Ge, which tended to incorporate as a single delta-doped layer in GaN, was identified as Ge riding along the cyclical metal-rich Ga adlayer used for high quality GaN, incorporating during subsequent nitrogen-rich growth step. Modifying the growth strategy results in improved structural quality, elemental abruptness, and luminescence response. This realization of structurally and elementally abrupt interfaces demonstrates the potential of heteroepitaxially integrated binary and ternary nitrides for energy-relevant devices.

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Improved Performance Of Gainn Based Deep Green Light Emitting Diodes Through V-Defect Reduction

Characterization of GaInN/GaN layers for green emitting laser diodes

Structural Analysis in Low-V-defect Blue and Green GaInN/GaN Light Emitting Diodes

Enhanced Light Extraction from a GaN-based Green Light-Emitting Diode with Hemicylindrical Linear Grating Structure.

Growth and characterization of green GaInN-based light emitting diodes on free-standing non-polar GaN templates

Boosting Green GaInN/GaN Light-Emitting Diode Performance by a GaInN Underlying Layer

Micrometer scale InGaN green light emitting diodes with ultra-stable operation

Development of High Power Green Light Emitting Diode Dies in Piezoelectric Gainn/Gan

Analysis of the Quantum Efficiency of Gainn/Gan Light Emitting Diodes in the Range of 390-580 Nm

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Green LED Development in Polar and Non-Polar Growth Orientation

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Very Strong Nonlinear Optical Absorption in Green GaInN/GaN Multiple Quantum Well Structures

Ultra High Luminous Efficiency P-Type Surface Defect Structure GaN LED

Efficient InGaN-based Red Light-Emitting Diodes by Modulating Trench Defects

V‐defect Analysis in Green and Deep Green Light Emitting Diode Structures

Improving luminescence response in ZnGeN2/GaN superlattices: defect reduction through composition control

Dislocation Analysis in Homoepitaxial Gainn/Gan Light Emitting Diode Growth

A Novel Way to Fill Green Gap of GaN-Based LEDs by Pinning Defects in Nanorod Array.

The Effect of Nanometer‐Scale V‐Pit Layer on the Carrier Recombination Mechanisms and Efficiency Droop of GaN‐Based Green Light‐Emitting Diodes