Abstract:The large polarization barriers between the quantum wells and quantum barriers in long-wavelength GaN-based light-emitting diodes (LEDs) inhibit their performance by requiring excess driving voltages to reach standard operating current densities. Lateral injection of carriers directly into quantum wells is required to circumvent this issue. V-defects are naturally occurring inverted hexagonal defects with semipolar 101 ̄1-plane sidewalls generated on surface depressions from threading dislocations. LEDs engineered to intentionally generate V-defects below the active region of the LED can achieve lateral carrier injection through the V-defect sidewalls and have already been able to demonstrate world record wall-plug efficiencies for LEDs in the green-red wavelengths. V-defects can be enlarged during kinetically limited growth where the growth rate of the c-plane GaN is faster than that of their sidewalls, leaving them unfilled. We report on the metal organic chemical vapor deposition growth conditions required to fill in V-defects with p-GaN during epitaxial growth of the LED post the active region. Circular transmission length measurements of Pd/Au contacts processed on p-GaN surfaces with various amounts of unfilled V-defects showed no significant difference in their sheet resistance and specific contact resistance. J–V measurements of LEDs grown with varying unfilled V-defect densities showed no significant difference in the forward bias regime. However, in the reverse bias regime, catastrophic breakdown occurred at markedly lower voltages for samples with larger unfilled V-defect densities. This suggests that unfilled V-defects may act as hotspots for device failure, and planarizing LED surfaces may help prevent early degradation of LED devices.

V‐defect Analysis in Green and Deep Green Light Emitting Diode Structures

Structural Analysis in Low-V-defect Blue and Green GaInN/GaN Light Emitting Diodes

Defect analysis of the LED structure deposited on the sapphire substrate

Characterisation of Defects at Non-Polar GaN/InGaN Junctions in Novel Materials for Application in Light Emitting Diodes

Enhanced Device Performance of GaInN‐based Deep Green Light Emitting Diodes with V‐defect‐free Active Region

Improved Performance Of Gainn Based Deep Green Light Emitting Diodes Through V-Defect Reduction

Nanoscale Characterization of V-defect in InGaN/GaN QWs LEDs using Near-Field Scanning Optical Microscopy.

Comparative Analysis of Microstructure, Electrical and Optical Performance in Sidewall Etching Process for GaN-Based Green Micro-LED

Defect-Reduced Green Gainn/Gan Light-Emitting Diode On Nanopatterned Sapphire

Defect Structure and Evolution of GaN-Based Light-Emitting Diodes on Planar and Cone-Patterned Sapphire Substrates

Study of Defect and Spectral Characteristics of Light Emitting Diodes with Multiple InGaN/GaN Quantum Wells on Patterned Sapphire Substrates

Planarization of p -GaN surfaces on MOCVD grown V-defect engineered GaN-based LEDs

Evolution of Defect in AlGaN-based Deep Ultraviolet Light Emitting Diodes During Electrical Stress

Efficiency and Forward Voltage of Blue and Green Lateral LEDs with V-shape defects and Random Alloy Fluctuation in Quantum Wells

Size-dependent sidewall defect effect of GaN blue micro-LEDs by photoluminescence and fluorescence lifetime imaging

Interplay of Point Defects, Extended Defects, and Carrier Localization in the Efficiency Droop of InGaN Quantum Wells Light-Emitting Diodes Investigated Using Spatially Resolved Electroluminescence and Photoluminescence

Defect Influence on Luminescence Efficiency of GaN-based LEDs

The Differences in Spatial Luminescence Characteristics between Blue and Green Quantum Wells in Monolithic Semipolar (20-21) LEDs Using SNOM

Spatial Identification of "Zeroth Defect" Formation in Organic Light-Emitting Diodes by Multispectral Mappings

Effect of V-defects on the Performance Deterioration of InGaN/GaN Multiple-Quantum-well Light-Emitting Diodes with Varying Barrier Layer Thickness

Effects of Defects on the Thermal and Optical Performance of High-Brightness Light-Emitting Diodes