Abstract:V-pit-defects in GaN-based light-emitting diodes induced by dislocations are considered beneficial to electroluminescence because they relax the strain in InGaN quantum wells and also enhance the hole lateral injection through sidewall of V-pits. In this paper, regularly arranged V-pits are formed on c-plane GaN grown by metal organic vapor phase epitaxy on conventional c-plane cone-patterned sapphire substrates. The size of V-pits and area of flat GaN can be adjusted by changing growth temperature. Five pairs of InGaN/GaN multi-quantumwell and also a light-emitting diode structure are grown on this V-pit-shaped GaN. Two peaks around 410 nm and 450 nm appearing in both photoluminescence and cathodeluminescence spectra are from the semipolar InGaN/GaN multi-quantum-well on sidewalls of V-pits and cplane InGaN/GaN multi-quantum-well, respectively. In addition, dense bright spots can be observed on the surface of light-emitting diode when it works under small injection current, which are believed owing to the enhanced hole injection around V-pits.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: How to improve the electroluminescence performance of InGaN/GaN multi - quantum - well (MQW) LEDs by growing GaN - based light - emitting diodes (LEDs) with regularly arranged V - pit defects on patterned sapphire substrates (PSS). Specifically, the author hopes to explore the following issues: 1. **Influence of V - pit defects on electroluminescence**: - Can V - pit defects effectively improve the electroluminescence efficiency? - Can V - pit defects improve the uniformity of hole concentration distribution in different quantum wells by enhancing hole injection through sidewalls? 2. **Formation mechanism and optimization of V - pit defects**: - How to control the size and area of V - pits by adjusting parameters such as growth temperature? - How to optimize the shape and distribution of V - pits to achieve stronger electroluminescence intensity? 3. **Influence of V - pit defects on the luminescence characteristics of quantum wells**: - What are the differences in the luminescence characteristics between the semi - polar InGaN/GaN multi - quantum wells inside V - pits and the c - plane InGaN/GaN multi - quantum wells in the planar area? - Can the existence of V - pits relieve the strain in InGaN quantum wells, thereby weakening the polarization effect and improving the luminescence efficiency? ### Specific problem analysis #### 1. Influence of V - pit defects on electroluminescence The author found through experiments that under low - current injection, dense bright spots appeared on the surface of LEDs with V - pit morphology. These bright spots are considered to be caused by enhanced lateral hole injection at the V - pit sidewalls. This indicates that V - pit defects do help to improve the electroluminescence performance. #### 2. Formation mechanism and optimization of V - pit defects The author grew GaN films with regularly arranged V - pits on patterned sapphire substrates by metal - organic vapor - phase epitaxy (MOVPE) technology and controlled the size of V - pits and the area of flat GaN regions by adjusting the growth temperature. The study found that reducing the growth temperature can induce the formation of V - pits, and the shape and distribution of V - pits strictly correspond to the substrate pattern. #### 3. Influence of V - pit defects on the luminescence characteristics of quantum wells Through photoluminescence (PL) and cathodoluminescence (CL) measurements, the author observed two main luminescence peaks, located at around 410 nm and 450 nm respectively. These two peaks are respectively sourced from the semi - polar InGaN/GaN multi - quantum wells on the V - pit sidewalls and the c - plane InGaN/GaN multi - quantum wells in the planar area. The study shows that the semi - polar quantum wells inside V - pits have a shorter luminescence wavelength due to the lower polarization field and thinner InGaN layer. In addition, the existence of V - pits helps to relieve the strain in InGaN quantum wells, thereby weakening the piezoelectric polarization effect and improving the luminescence efficiency. ### Conclusion This paper successfully improves the electroluminescence performance by growing GaN - based LEDs with regularly arranged V - pits on patterned sapphire substrates. V - pit defects can not only enhance hole injection through sidewalls but also relieve the strain in InGaN quantum wells, thereby improving the luminescence efficiency. However, further research is required to optimize the size and distribution of V - pits to achieve stronger electroluminescence intensity. Through the solution of these problems, this research provides new ideas and technical means for the development of high - performance GaN - based LEDs.

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