Abstract:A hybrid patterned sapphire substrate (hybrid-PSS) was prepared using an anodic aluminum oxide etching mask to transfer nanopatterns onto a conventional patterned sapphire substrate with microscale patterns (bare-PSS). The threading dislocation (TD) suppression of light-emitting diodes (LEDs) grown on a hybrid-PSS (HP-LED) exhibits a smaller reverse leakage current compared with that of LEDs grown on a bare-PSS (BP-LED). The strain-free GaN buffer layer and fully strained InGaN active layer were evidenced by cross-sectional Raman spectra and reciprocal space mapping of the X-ray diffraction intensity for both samples. The calculated piezoelectric fields for both samples are close, implying that the quantum-confined Stark effect was not a dominant mechanism influencing the electroluminescence (EL) peak wavelength under a high injection current. The bandgap shrinkage effect of the InGaN well layer was considered to explain the large red-shifted EL peak wavelength under high injection currents. The estimated LED chip temperatures rise from room temperature to 150 °C and 75 °C for BP-LED and HP-LED, respectively, at a 600-mA injection current. This smaller temperature rise of the LED chip is attributed to the increased contact area between the sapphire and the LED structural layer because of the embedded nanopattern. Although the chip generates more heat at high injection currents, the accumulated heat can be removed to outside the chip effectively. The high diffuse reflection (DR) rate of hybrid-PSS increases the escape probability of photons, resulting in an increase in the viewing angle of the LEDs from 130° to 145°. The efficiency droop was reduced from 46% to 35%, effects which can be attributed to the elimination of TDs and strain relaxation by embedded nanopatterns. In addition, the light output power of HP-LED at 360-mA injection currents exhibits a ∼ 22.3% enhancement, demonstrating that hybrid-PSSs are beneficial to apply in high-power LEDs.

InGaN/GaN Multi-Quantum-Well and Light-Emitting Diode Based on V-pit-Shaped GaN Grown on Patterned Sapphire Substrate

V-shaped Semipolar InGaN/GaN Multi-Quantum-well Light-Emitting Diodes Directly Grown on C-Plane Patterned Sapphire Substrates

Study of Defect and Spectral Characteristics of Light Emitting Diodes with Multiple InGaN/GaN Quantum Wells on Patterned Sapphire Substrates

Defect Structure and Evolution of GaN-Based Light-Emitting Diodes on Planar and Cone-Patterned Sapphire Substrates

InGaN/GaN multi-quantum-well nanowires and light emitting

Multicolored-light Emission from InGaN/GaN Multiple Quantum Wells Grown by Selective-Area Epitaxy on Patterned Si(100) Substrates

Fabrication and Investigation of InGaN/GaN Multi-quantum-well Nanowire Light Emitting Diode

InGaN/GaN Multi-Quantum-well Planar Metal-Semiconductor-metal Light-Emitting Diodes

Deep Hole Injection Assisted By Large V-Shape Pits In Ingan/Gan Multiple-Quantum-Wells Blue Light-Emitting Diodes

Metal–Organic Vapor‐Phase Epitaxy of Semipolar InGaN Quantum Dots Based on GaN V‐Shaped Pits

Hole Injection from the Sidewall of V-Shaped Pits into C-Plane Multiple Quantum Wells in Ingan Light Emitting Diodes

InGaN-Based Light-Emitting Diodes Grown on a Micro/Nanoscale Hybrid Patterned Sapphire Substrate

Monolithic semi-polar ($1ar{1}01$) InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate

Monolithic semi-polar () InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate*

Enhanced Light Emission due to Formation of Semi-polar InGaN/GaN Multi-quantum Wells

[Optical Characteristics of InGaN/GaN Light Emitting Diodes on Patterned Sapphire Substrate].

Enhanced Hole Transport of Nonpolar InGaN-based Light-emitting Diodes with Lateral P-Type Superlattice Doping Structure

The Enhancement of Light-Emitting Efficiency Using GaN-based Multiple Quantum Well Light-Emitting Diodes with Nanopillar Arrays

Ingan/Gan Multilayer Quantum Dots Yellow-Green Light-Emitting Diode with Optimized Gan Barriers

Defect-Reduced Green Gainn/Gan Light-Emitting Diode On Nanopatterned Sapphire

OPTICAL PROPERTIES OF GaInN/GaN MULTI-QUANTUM WELL STRUCTURE AND LIGHT EMITTING DIODE GROWN BY METALORGANIC CHEMICAL VAPOR PHASE EPITAXY