Abstract:Color-mixed (cm) light-emitting diodes (LEDs) are theoretically the most efficient white light emitters, projected to improve white light luminous efficacy by 34% compared to incumbent phosphor converted LEDs. Since white light technology is globally pervasive and essential, small improvements in LED technology can result in energy savings. However, cm-LEDs are not yet realized due to poor efficacy in green and amber emitting materials, a spectral region colloquially referred to as the green gap. ZnGeN2 is nearly isostructural and closely lattice-matched to GaN and can be heteroepitaxially integrated with existing GaN devices; ZnGeN2/GaN hybrid structures are theorized to emit green (∼530 nn) light with a spontaneous emission rate 4.6-4.9 times higher than traditional InGaN LEDs when incorporated into III-N LED structures. In this report we demonstrate the molecular beam epitaxy (MBE) growth of GaN and ZnGeN2 superlattices, an important step towards realizing multiple quantum well structures required for efficient LEDs. Elemental analysis, including atom probe tomography, shows that Ga and Ge are observed in both ZnGeN2 and GaN layers, degrading the structural uniformity. The lack of elemental abruptness also leads to increased defect luminescence and reabsorption of band edge luminescence. The source of unintentional Ga distributed throughout the ZnGeN2 layers was identified as excess flux escaping from around the closed MBE shutter. The source of unintentional Ge, which tended to incorporate as a single delta-doped layer in GaN, was identified as Ge riding along the cyclical metal-rich Ga adlayer used for high quality GaN, incorporating during subsequent nitrogen-rich growth step. Modifying the growth strategy results in improved structural quality, elemental abruptness, and luminescence response. This realization of structurally and elementally abrupt interfaces demonstrates the potential of heteroepitaxially integrated binary and ternary nitrides for energy-relevant devices.

Structural Analysis in Low-V-defect Blue and Green GaInN/GaN Light Emitting Diodes

Characterisation of Defects at Non-Polar GaN/InGaN Junctions in Novel Materials for Application in Light Emitting Diodes

V‐defect Analysis in Green and Deep Green Light Emitting Diode Structures

Enhanced Device Performance of GaInN‐based Deep Green Light Emitting Diodes with V‐defect‐free Active Region

Defect Structure and Evolution of GaN-Based Light-Emitting Diodes on Planar and Cone-Patterned Sapphire Substrates

Nanoscale Characterization of V-defect in InGaN/GaN QWs LEDs using Near-Field Scanning Optical Microscopy.

Structural Characterization of Homoepitaxial Blue GaInN/GaN Light-Emitting Diodes by Transmission Electron Microscopy

Planarization of p -GaN surfaces on MOCVD grown V-defect engineered GaN-based LEDs

Dislocation half-loop control for optimal V-defect density in GaN-based light emitting diodes

Dislocation Analysis in Homoepitaxial Gainn/Gan Light Emitting Diode Growth

Improved Performance Of Gainn Based Deep Green Light Emitting Diodes Through V-Defect Reduction

Ultra High Luminous Efficiency P-Type Surface Defect Structure GaN LED

Size-dependent sidewall defect effect of GaN blue micro-LEDs by photoluminescence and fluorescence lifetime imaging

Characterization of GaInN/GaN layers for green emitting laser diodes

Defect-Reduced Green Gainn/Gan Light-Emitting Diode On Nanopatterned Sapphire

Structure, defects, and optical properties of commensurate GaN/ZnGeN2/GaN double heterojunctions

Study on Dislocation Annihilation Mechanism of the High-Quality GaN Grown on Sputtered AlN/PSS and Its Application in Green Light-Emitting Diodes

Dislocation and Indium Droplet Related Emission Inhomogeneities in InGaN LEDs

Green Light Emitting Diodes on A-Plane GaN Bulk Substrates

Improving luminescence response in ZnGeN2/GaN superlattices: defect reduction through composition control

Defects in IIINitrides Epilayers