Abstract:The high power GaN-based blue light emitting diode（LED） on an 80-μm-thick GaN template is proposed and even realized by several technical methods like metal organic chemical vapor deposition（MOCVD）, hydride vapor-phase epitaxial（HVPE）, and laser lift-off（LLO）. Its advantages are demonstrated from material quality and chip processing. It is investigated by high resolution X-ray diffraction（XRD）, high resolution transmission electron microscope（HRTEM）, Rutherford back-scattering（RBS）, photoluminescence, current-voltage and light output-current measurements. The width of（0002） reflection in XRD rocking curve, which reaches 173 for the thick GaN template LED, is less than that for the conventional one, which reaches 258. The HRTEM images show that the multiple quantum wells（MQWs） in 80-μmthick GaN template LED have a generally higher crystal quality. The light output at 350 mA from the thick GaN template LED is doubled compared to traditional LEDs and the forward bias is also substantially reduced. The high performance of 80-μm-thick GaN template LED depends on the high crystal quality. However, although the intensity of MQWs emission in PL spectra is doubled, both the wavelength and the width of the emission from thick GaN template LED are increased. This is due to the strain relaxation on the surface of 80-μm-thick GaN template, which changes the strain in InGaN QWs and leads to InGaN phase separation.

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Structural Characterization of Homoepitaxial Blue GaInN/GaN Light-Emitting Diodes by Transmission Electron Microscopy

Growth and characterization of green GaInN-based light emitting diodes on free-standing non-polar GaN templates

Structural Analysis in Low-V-defect Blue and Green GaInN/GaN Light Emitting Diodes

Growth and Characterization of Micro-LED Based on GaN Substrate

Defect Structure and Evolution of GaN-Based Light-Emitting Diodes on Planar and Cone-Patterned Sapphire Substrates

Characterisation of Defects at Non-Polar GaN/InGaN Junctions in Novel Materials for Application in Light Emitting Diodes

Green Light Emitting Diodes on A-Plane GaN Bulk Substrates

The Effect of Gan Single Crystal Substrate Characteristics on Homo-Epitaxial Gan Films

Characterization of GaInN/GaN layers for green emitting laser diodes

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Optimization of Hetero-Epitaxial Growth for the Threading Dislocation Density Reduction of Germanium Epilayers

Enhanced Light Extraction from a GaN-based Green Light-Emitting Diode with Hemicylindrical Linear Grating Structure.

Efficiency Droop in Ingan/Gan Multiple-Quantum-Well Blue Light-Emitting Diodes Grown on Free-Standing Gan Substrate

Enhanced Performance of InGaN Light-Emitting Diodes Via High-Quality GaN and Embedded Air Voids Grown on Hexagonal 3D Serpentine Mask Sapphire Substrates

Improved Performance Of Gainn Based Deep Green Light Emitting Diodes Through V-Defect Reduction

Enhanced Device Performance of GaInN‐based Deep Green Light Emitting Diodes with V‐defect‐free Active Region

Homo-epitaxial Growth of High Crystal Quality GaN Thin Films by Plasma Assisted–molecular Beam Epitaxy

Growth of III-Nitride Materials and Blue Light-Emitting Diodes by Metal Organic Vapor Phase Epitaxy

Quasi-Homoepitaxial Gan-Based Blue Light Emitting Diode on Thick Gan Template

Structural and Optical Properties of Nonpolar m-Plane GaN and GaN-Based LEDs on ?-LiAlO2