Abstract:Germanium (Ge), the next-in-line group-IV material, bears great potential to add functionality and performance to next-generation nanoelectronics and solid-state quantum transport based on silicon (Si) technology. Here, we investigate the direct epitaxial growth of two-dimensional high-quality crystalline Ge layers on Si deposited at ultra-low growth temperatures ($T_{Ge} = 100^{\circ}\mathrm{C}-350^{\circ}\mathrm{C}$) and pristine growth pressures ($\lesssim 10^{-10}\,\mathrm{mbar}$). First, we show that $T_{Ge}$ does not degrade the crystal quality of homoepitaxial Ge/Ge(001) by comparing the point defect density using positron annihilation lifetime spectroscopy. Subsequently, we present a systematic investigation of the Ge/Si(001) heteroepitaxy, varying the Ge coverage (${\theta}_{Ge}$, 1, 2, 4, 8, 12, and 16 nm) and $T_{Ge}$ ($100^{\circ}\mathrm{C}$ to $300^{\circ}\mathrm{C}$, in increments of $50^{\circ}\mathrm{C}$) to assess the influence of these parameters on the layer's structural quality. Atomic force microscopy revealed a rippled surface topography with superimposed grainy features and the absence of three-dimensional structures, such as quantum dots. Transmission electron microscopy unveiled pseudomorphic, grains of highly crystalline growth separated by defective domains. Thanks to nanobeam scanning x-ray diffraction measurements, we were able to evidence the lattice strain fluctuations due to the ripple-like structure of the layers. We conclude that the heteroepitaxial strain contributes to the formation of the ripples, which originate from the kinetic limitations of the ultra-low temperatures.

Optimization of Hetero-Epitaxial Growth for the Threading Dislocation Density Reduction of Germanium Epilayers

High-quality germanium growth on (111)-faceted V-groove silicon by molecular beam epitaxy

Trapping Threading Dislocations in Germanium Trenches on Silicon Wafer

Epitaxial growth of low dislocation Ge thin films on Si (001) substrates using a Si-Ge intermediate layer

Thermally Induced Surface Faceting on Heteroepitaxial Layers

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

Single-Crystalline Si1-Xgex (X=0.5 Similar To 1) Thin Films On Si (001) With Low Threading Dislocation Density Prepared By Low Temperature Molecular Beam Epitaxy

Effects of phosphorous and antimony doping on thin Ge layers grown on Si

Significant Photoluminescence Improvements from Bulk Germanium-Based Thin Films with Ultra-low Threading Dislocation Densities

Point defect–dislocation interactions in BEOL-compatible Ge-on-Si epitaxy

Ge epitaxy at ultra-low growth temperatures enabled by a pristine growth environment

Study on Micro-Structural Properties of Pbte/Cd0.98zn0.02te (111) Hetero-System Grown by Molecular-Beam Epitaxy

Elucidating proper framework for determination of threading dislocation densities in semiconductor films: a comprehensive study based on Ge/Si(001)

Reduction Mechanisms for Dislocation Densities in GaN Heteroepitaxy over Si Substrate Patterned with a Serpentine Channel Structure

Heteroepitaxial Growth of Ge Films on Si Substrates by Molecular-Beam Epitaxy

Heteroepitaxial Growth of Germanium-on-Silicon Using Ultrahigh-Vacuum Chemical Vapor Deposition with RF Plasma Enhancement

Relaxed Ge0.9si0.1 Alloy Layers with Low Threading Dislocation Densities Grown on Low-Temperature Si Buffers

Effect of Hydrogen Annealing on the Property of Low-temperature Epitaxial Growth of Sige Thin Films on Si Substrate

Low threading dislocation density GaAs growth on on-axis GaP/Si (001)

High-quality Ge film grown on Si substrate and its thermodynamic mechanism

Low Threading Dislocation Density in GaN Films Grown on Patterned Sapphire Substrates