Abstract:The development of the low dislocation density of the Si-based GaAs buffer is considered the key technical route for realizing InAs/GaAs quantum dot lasers for photonic integrated circuits. To prepare the high-quality GaAs layer on the Si substrate, we employed an engineered Ge-buffer on Si, used thermal cycle annealing, and introduced filtering layers, e.g., strained-layer superlattices, to control/reduce the threading dislocation density in the active part of the laser. In this way, a low defect density of 2.9 × 107 cm−2 could be achieved in the GaAs layer with a surface roughness of 1.01 nm. Transmission electron microscopy has been applied to study the effect of cycling, annealing, and filtering layers for blocking or bending threading-dislocation into the InAs QDs active region of the laser. In addition, the dependence of optical properties of InAs QDs on the growth temperature was also investigated. The results show that a density of 3.4 × 1010 InAs quantum dots could be grown at 450 °C, and the photoluminescence exhibits emission wavelengths of 1274 nm with a fullwidth at half-maximum (FWHM) equal to 32 nm at room temperature. The laser structure demonstrates a peak at 1.27 μm with an FWHM equal to 2.6 nm under a continuous-wave operation with a threshold current density of ∼158 A/cm2 for a 4-μm narrow-ridge width InAs QD device. This work, therefore, paves the path for a monolithic solution for photonic integrated circuits when III−V light sources (which is required for Si photonics) are grown on a Ge-platform (engineered Ge-buffer on Si) for the integration of the CMOS part with other photonic devices on the same chip in near future.

Low threading dislocation density GaAs growth on on-axis GaP/Si (001)

Epitaxial growth of high-quality GaAs on Si(001) using ultrathin buffer layers

Optimization of Hetero-Epitaxial Growth for the Threading Dislocation Density Reduction of Germanium Epilayers

Epitaxial GaSb films directly grown on on-axis Si(001) with low defect density by MBE

Epitaxy of GaAs thin film with low defect density and smooth surface on Si substrate

Reduced Dislocation of GaAs Layer Grown on Ge-Buffered Si (001) Substrate Using Dislocation Filter Layers for an O-Band InAs/GaAs Quantum Dot Narrow-Ridge Laser

Strain Relief by Periodic Misfit Arrays for Low Defect Density Gasb on Gaas

Formation of Thin GaAs Buffer Layers on Silicon for Light-Emitting Devices

Threading dislocations reduction of GaN-on-Si by introducing AlN/3D-GaN with SiN interlayer for photodetectors

Optimized InGaAs growth on GaP/Si(1 0 0) templates with different low-temperature layers

Wafer-scale crack-free 10 µm-thick GaN with a dislocation density of 5.8 × 107 cm−2 grown on Si

Low Threading Dislocation Density in GaN Films Grown on Patterned Sapphire Substrates

Nanoscale Growth of Gaas on Patterned Si(111) Substrates by Molecular Beam Epitaxy

Modified Dislocation Filter Method: Toward Growth of GaAs on Si by Metal Organic Chemical Vapor Deposition

Elimination of Threading Dislocations in As-Grown Pbse Film on Patterned Si(111) Substrate Using Molecular Beam Epitaxy

GaSb and GaSb/AlSb Superlattice Buffer Layers for High-Quality Photodiodes Grown on Commercial GaAs and Si Substrates

Molecular Beam Epitaxy of High-Quality GaAs on Si (001) by Multi-Time Thermal Cycle Annealing

Reduction of threading dislocations in GaN grown on patterned sapphire substrate masked with serpentine channel

Growth of 4 Inch Diameter GaSb (100) Single Crystal with Low Dislocation Density and High Quality Substrate Preparation

Investigation of Defect Formation in InGaAs on GaP/Si (100) Substrates

Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility