Abstract:The emerging ultrawide-bandgap AlGaN alloy system holds promise for the development of advanced materials in the next generation of power semiconductor and UV optoelectronic devices. Within this context, heterostructures based on III-nitrides are very popular in view of their applications as electronics and optoelectronics components. AlGaN-based deep UV emitters are gaining visibility for their disinfection capabilities. Likewise, high electron mobility transistors are attracting increasing attention owing to their superior electron transport which yields high-speed and high-power applications. Those devices are conventionally made of AlGaN/GaN heterostructures grown on foreign substrate. However, structural defects, including stress induced by a mismatch in unit cell parameters and the presence of dislocations, can not only decrease the efficiency of the light emitters (by facilitating the non-radiative recombination of electron-hole pairs), it also impede electron mobility within the two-dimensional electron gas at the AlGaN/GaN interface. Therefore, the significance of obtaining high-quality AlGaN layers becomes evident. Including a thin AlN interlayer between the GaN buffer layer and AlGaN is a possible answer to address these drawbacks. Not only do we show that a thin AlN layer, approximately ≤ 3 nm in thickness, between the GaN buffer and AlGaN layers, is effective in decreasing the dislocation densities in the AlGaN layer by around 30%. Still, this is responsible of an increase in the electron mobility (approximately 33%) compared to a classical AlGaN/GaN heterostructure. Additionally, the resulting heterostructure exhibits better optical quality, with a 7-fold increase in intensity as well as a 20% reduction in full-width at half-maximum in the AlGaN emission.

Threading dislocations reduction of GaN-on-Si by introducing AlN/3D-GaN with SiN interlayer for photodetectors

Reduction of Dislocations in GaN Epilayer Grown on Si (111) Substrates Using a GaN Intermedial Layer

Normal Incidence Intersubband Absorption in GaN/AlN Superlattices Grown on Facet-Controlled Epitaxial Lateral Overgrown GaN/Sapphire Templates

Growth of High Quality GaN Layers with AlN Buffer on Si(1 1 1) Substrates

Impact of GaN Transition Layers in the Growth of GaN Epitaxial Layer on Silicon

Influence of Ultrathin AlN Interlayer on the Microstructure and the Electrical Transport Properties of AlxGa1−xN/GaN Heterostructures

Photocurrent Property of GaN on the Si Photodetector with a Nearly Polycrystalline Α-Al2o3 Buffer Layer

Reduction of threading dislocations in GaN grown on patterned sapphire substrate masked with serpentine channel

Wafer-scale crack-free 10 µm-thick GaN with a dislocation density of 5.8 × 107 cm−2 grown on Si

Reduction of Threading Dislocations in N-Polar Gan Using A Pseudomorphicaly Grown Graded-Al-Fraction Algan Interlayer

AlN interlayer-induced reduction of dislocation density in the AlGaN epilayer

Threading dislocation and lattice stress modulation of Si based GaN material with AlPN nucleation layer

Ultralow-Supersaturation Al Pretreatment Toward Low Dislocation Density and Low Radio Frequency Loss GaN/AlN Epi-Stacks on High-Resistivity Si Substrates

Growth and Photocurrent Property of GaN/anodic Alumina/si

Investigation of GaN layer grown on Si(1 1 1) substrate using an ultrathin AlN wetting layer

AlGaN-Based Ultraviolet PIN Photodetector Grown on Silicon Substrates Using SiN Nitridation Process and Step-Graded Buffers

Vacancy-engineering-induced dislocation inclination in III-nitrides on Si substrates

The Growth of Iii-Nitrides for Photodetector Applications

Effect of the N/Al Ratio of AlN Buffer on the Crystal Properties and Stress State of GaN Film Grown on Si(111) Substrate

Crack-free 2.2 μm-thick GaN grown on Si with a single-layer AlN buffer for RF device applications

Investigation of GaN with Low Threading Dislocation Density Grown on Graphene/Sputtered AlN Composite Substrate