Abstract:GaN on Si plays an important role in the integration and promotion of GaN-based wide-gap materials with Si-based integrated circuits (IC) technology. A series of GaN film materials were grown on Si (111) substrate using a unique plasma assistant molecular beam epitaxy (PA-MBE) technology and investigated using multiple characterization techniques of Nomarski microscopy (NM), high-resolution X-ray diffraction (HR-XRD), variable angular spectroscopic ellipsometry (VASE), Raman scattering, photoluminescence (PL), and synchrotron radiation (SR) near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. NM confirmed crack-free wurtzite (w-) GaN thin films in a large range of 180–1500 nm. XRD identified the w- single crystalline structure for these GaN films with the orientation along the c-axis in the normal growth direction. An optimized 700 °C growth temperature, plus other corresponding parameters, was obtained for the PA-MBE growth of GaN on Si, exhibiting strong PL emission, narrow/strong Raman phonon modes, XRD w-GaN peaks, and high crystalline perfection. VASE studies identified this set of MBE-grown GaN/Si as having very low Urbach energy of about 18 meV. UV (325 nm)-excited Raman spectra of GaN/Si samples exhibited the GaN E2(low) and E2(high) phonon modes clearly without Raman features from the Si substrate, overcoming the difficulties from visible (532 nm) Raman measurements with strong Si Raman features overwhelming the GaN signals. The combined UV excitation Raman–PL spectra revealed multiple LO phonons spread over the GaN fundamental band edge emission PL band due to the outgoing resonance effect. Calculation of the UV Raman spectra determined the carrier concentrations with excellent values. Angular-dependent NEXAFS on Ga K-edge revealed the significant anisotropy of the conduction band of w-GaN and identified the NEXAFS resonances corresponding to different final states in the hexagonal GaN films on Si. Comparative GaN material properties are investigated in depth.

Investigation of GaN layer grown on Si(1 1 1) substrate using an ultrathin AlN wetting layer

Impact of GaN Transition Layers in the Growth of GaN Epitaxial Layer on Silicon

Growth of High Quality GaN Layers with AlN Buffer on Si(1 1 1) Substrates

High Quality GaN Layers Grown on SiC Substrates with AlN Buffers by Metalorganic Chemical Vapor Deposition

X-ray Diffraction, Photoluminescence and Secondary Ion Mass Spectroscopy Study of GaN Films Grown on Si(111) Substrate by Vacuum Reactive Evaporation

Investigation Of Preparation And Properties Of Epitaxial Growth Gan Film On Si(111) Substrate

Investigation of preparation and properties of epitaxial growth GaN film on Si(1 1 1) substrate

High quality GaN epilayers grown on Si (1 1 1) with thin nonlinearly composition-graded AlxGa1-xN interlayers via metal-organic chemical vapor deposition

Growth of AlN Films on Si ( 100 ) and Si ( 111 ) Substrates by Reactive Magnetron Sputtering

The growth and characterization of GaN grown on an Al2O3 coated (0 0 1) Si substrate by metalorganic vapor phase epitaxy

Effect of AlN nucleation layer thickness on the quality of GaN grown on Si(111)

Growth of High-Quality AlGaN Epitaxial Films on Si Substrates

The influence of an AlN seeding layer on nucleation of self-assembled GaN nanowires on silicon substrates

Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures

Growth of GaN on γ-Al2O3/Si(001) Composite Substrates

The Effect of Single AlGaN Interlayer on the Structural Properties of GaN Epilayers Grown on Si (111) Substrates

Gan Layers on Si (111) from Nanocolumns to Nanorods by Plasma-Assisted Molecular Beam Epitaxy

Optical, Structural, and Synchrotron X-ray Absorption Studies for GaN Thin Films Grown on Si by Molecular Beam Epitaxy

Growth of AlGaN Film on Si (111) Substrate

Influence of AlN Buffer Layer Thickness on Structural Properties of GaN Epilayer Grown on Si (111) Substrate with AlGaN Interlayer

A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD