Abstract:GaN is considered as a promising material for high power,high temperature and high frequency microwave applications,due to the wide band gap,high thermal stability and high breakdown voltage.Due to lack of suited homosubstrates,GaN is currently grown on heterosubstrates where SiC is the most popular choice for commercial applications.However,it is difficult to obtain high quality GaN because of the 33.1% mismatch of thermal expansion coefficients and the large lattice mismatch(3.5%) between GaN and SiC.In this paper,GaN epitaxial layers were grown on 6H-SiC substrates by metalorganic chemical vapor deposition.Samples employing high temperature AlN as buffer layers produce high quality GaN epitaxial layers. Five samples with different AlN buffer layers were prepared.The effects of the growth parameters of AlN buffer layers on characterizations of GaN were studied.The highest quality GaN layer grown on SiC substrate with AlN buffer was obtained by optimizing the growth parameters of the AlN buffer.The full width at half maximum of High-resolution X-ray diffraction on-axis(0002) and off-axis(1012) diffraction are 130 arcsec and 252 arcsec,respectively.The values are the best result of GaN grown on homemade 6H-SiC.The quality of GaN layers will be deteriorated by increasing the thickness or the growth Ⅴ/Ⅲ ratio of AlN buffer layers,while the low growth temperature of AlN buffers also deteriorate the quality of GaN layers.The strain in GaN also has been studied.It is found that the GaN layer with narrow XRC FWHM has less stress intensity.

High quality GaN epilayers grown on Si (1 1 1) with thin nonlinearly composition-graded AlxGa1-xN interlayers via metal-organic chemical vapor deposition

Thermal Stress Analysis and Structural Design of AlxGa1−xN/GaN Epilayers Based on Si Substrate

High quality crack-free GaN film grown on si (111) substrate without AlN interlayer

High-quality crack-free GaN epitaxial films grown on Si substrates by a two-step growth of AlN buffer layer

Impact of GaN Transition Layers in the Growth of GaN Epitaxial Layer on Silicon

Investigation of GaN layer grown on Si(1 1 1) substrate using an ultrathin AlN wetting layer

Effects of the thickness of low-temperature AlN interlayers on GaN layers grown on Si(111) substrates by MOCVD

Effect of AlN nucleation layer thickness on the quality of GaN grown on Si(111)

Growth of GaN on γ-Al2O3/Si(001) Composite Substrates

The Effect of Single AlGaN Interlayer on the Structural Properties of GaN Epilayers Grown on Si (111) Substrates

A Low-Temperature Aln Interlayer to Improve the Quality of Gan Epitaxial Films Grown on Si Substrates

Growth of High Quality GaN Layers with AlN Buffer on Si(1 1 1) Substrates

High Quality GaN Layers Grown on SiC Substrates with AlN Buffers by Metalorganic Chemical Vapor Deposition

Influence of AlN Buffer Layer Thickness on Structural Properties of GaN Epilayer Grown on Si (111) Substrate with AlGaN Interlayer

Growth of High-Quality AlGaN Epitaxial Films on Si Substrates

A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD

Growth mechanisms of GaN epitaxial films grown on ex situ low-temperature AlN templates on Si substrates by the combination methods of PLD and MOCVD

Improved Crystal Quality of Gan Film with the In-Plane Lattice-Matched In0.17al0.83n Interlayer Grown on Sapphire Substrate Using Pulsed Metal Organic Chemical Vapor Deposition

Design and Epitaxial Growth of Quality-Enhanced Crack-Free GaN Films on AlN/Al Heterostructures and Their Nucleation Mechanism

High-quality GaN grown on nitrogen-doped monolayer graphene without an intermediate layer

GaN growth on Si and Si-SiO2-Si compliant substrates