Abstract:Comparative study of high and low temperature AlN interlayers and their roles in the properties of GaN epilayers prepared by means of metal organic chemical vapour deposition on (0001) plane sapphire substrates is carried out by high resolution x-ray diffraction, photoluminescence and Raman spectroscopy. It is found that the crystalline quality of GaN epilayers is improved significantly by using the high temperature AlN interlayers, which prevent the threading dislocations from extending, especially for the edge type dislocation. The analysis results based on photoluminescence and Raman measurements demonstrate that there exists more compressive stress in GaN epilayers with high temperature AlN interlayers. The band edge emission energy increases from 3.423 eV to 3.438 eV and the frequency of the Raman shift of E(2) (TO) moves from 571.3 cm(-1) to 572.9 cm(-1) when the temperature of AlN interlayers increases from 700 degrees C to 1050 degrees C. It is believed that the temperature of AlN interlayers effectively determines the size, the density and the coalescence rate of the islands, and the high temperature AlN interlayers provide large size and low density islands for GaN epilayer growth and the threading dislocations are bent and interactive easily. Due to the threading dislocation reduction in GaN epilayers with high temperature AlN interlayers, the approaches of strain relaxation reduce drastically, and thus the compressive stress in GaN epilayers with high temperature AlN interlayers is high compared with that in GaN epilayers with low temperature AlN interlayers.

Improved Crystal Quality of Gan Film with the In-Plane Lattice-Matched In0.17al0.83n Interlayer Grown on Sapphire Substrate Using Pulsed Metal Organic Chemical Vapor Deposition

Improvements in A-Plane Gan Crystal Quality by Aln/Algan Superlattices Layers

High Quality InAlN/GaN Heterostructures Grown on Sapphire by Pulsed Metal Organic Chemical Vapor Deposition

A Low-Temperature Aln Interlayer to Improve the Quality of Gan Epitaxial Films Grown on Si Substrates

Influence of the Aln Interlayer Crystal Quality on the Strain Evolution of Gan Layer Grown on Si (111)

Improved Crystal Quality and Enhanced Optical Performance of GaN Enabled by Ion Implantation Induced High-Quality Nucleation

Improvement of (112̄2) semipolar gan crystal quality with tin interlayer by metal organic vapor phase epitaxy

Improved Surface Morphology and Reduced V-Pits Density of Lattice-Matched Alinn Films Grown by Atmospheric Pressure Metalorganic Chemical Vapor Deposition

Growth of InGaN Films on C-Plane Sapphire Substrates with an AlN Nucleation Layer by Using Metal-Organic Chemical-Vapor Deposition

Improvement of (11\bar{2}2) Semipolar GaN Crystal Quality with TiN Interlayer by Metal Organic Vapor Phase Epitaxy

High-quality crack-free GaN epitaxial films grown on Si substrates by a two-step growth of AlN buffer layer

Crystalline Quality of InxAl1-xN with Different Indium Contents Around Lattice-Matched to GaN

Improved crystal quality of AlGaN by Al ion-implantation sapphire substrate

The Effect of Single AlGaN Interlayer on the Structural Properties of GaN Epilayers Grown on Si (111) Substrates

Improved Characteristics of (112‾2) Al0.62Ga0.38N Film Grown with Pulsed Flow Growth Technique

Gan Grown on Ain/Sapphire Templates

Study on Growing Thick AlGaN Layer on C-Plane Sapphire Substrate and Free-Standing GaN Substrate

Improvement in a -Plane GaN Crystalline Quality Using Wet Etching Method

Comparative Study of Different Properties of GaN Films Grown on (0001) Sapphire Using High and Low Temperature AlN Interlayers

Effect of the N/Al Ratio of AlN Buffer on the Crystal Properties and Stress State of GaN Film Grown on Si(111) Substrate

Enhancing two-dimensional growth of high-temperature AlN buffer to improve the quality of GaN on Si grown by ex situ two-step method