Abstract:In this paper, the processing parameters of growing GaN epilayer by hydride vapor phase epitaxy are optimized The influences of the low-temperature (LT) nucleation layer growth time, WM precursor ratio and the growth temperature on GaN layer are investigated by the high-resolution X-ray diffraction (HRXRD) signature for the asymmetric and symmetric reflections. The investigation finds that the LT-nucleation layer not only supplies the nucleation centers having good crystal quality, but also promotes the lateral growth of the sequent high temperature (HT) growth. The optimal LT nucleation layer growth time, WEI precursor ratio and the growth temperature can effectively enhance lateral growth to reduce the crystal defects and are favorable to converting the growth mechanism from threedimension to two-dimension in HT growth. The structural and optoelectronic properties of the as-grown GaN layer with a thickness of 15 um at the optimal parameters are studied by scanning electron microcopy, atomic force microscopy (AFM), HRXRD, Raman spectra, and photoluminescence (PL) measurements. X-ray rocking curves show that the full widths at half maximum of (002) and (102) are 317 and 343 arcsec, respectively. The surface roughness (rms: root mean square) is 0.334 nm detected using AFM. These characteristics show that the sample has good lattice quality and smooth surface morphology. In PL spectrum, the near band edge emission is dominated by emission from excitons bound to neutral donors (D X) near 3.478 eV with 11 meV blue-shift and the yellow band emission is very weak. The results indicate that the GaN layer has good crystal quality and excellent optoelectronic properties, but a little biaxial in-plane compressive strain also exists in it due to the lattice and thermal mismatch.

Improvement in a -Plane GaN Crystalline Quality Using Wet Etching Method

Improved Crystal Quality of Nonpolar A-Plane GaN Based on the Nano Pattern Formed by the Annealed Thin Ni Layer

Improvements in A-Plane Gan Crystal Quality by Aln/Algan Superlattices Layers

Improved Crystal Quality of Gan Film with the In-Plane Lattice-Matched In0.17al0.83n Interlayer Grown on Sapphire Substrate Using Pulsed Metal Organic Chemical Vapor Deposition

High Quality a -Plane GaN Layers Grown by Pulsed Atomic-Layer Epitaxy on R -Plane Sapphire Substrates

Impact of GaN Transition Layers in the Growth of GaN Epitaxial Layer on Silicon

The Effect of Gan Single Crystal Substrate Characteristics on Homo-Epitaxial Gan Films

Reduction of structural defects in a -plane GaN epitaxy by use of periodic hemispherical patterns in r -plane sapphire substrates

Characterization of Crystal Lattice Constant and Dislocation Density of Crack-Free GaN Films Grown on Si(1 1 1)

High Quality A-Plane Gan Films Grown on Cone-Shaped Patterned R-Plane Sapphire Substrates

The triangular pits eliminate of (112̄0) a-plane GaN growth by metal-orgamic chemical vapor deposition

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

The Triangular Pits Eliminate of (1120) A-Plane GaN Growth by Metal-Orgamic Chemical Vapor Deposition

Optimization of the Parameters for Growth High-Qulity Gan Film by Hydride Vapor Phase Epitaxy

A Comparative Study on the Properties of C-Plane and A-Plane GaN Epitaxial Films Grown on Sapphire Substrates by Pulsed Laser Deposition

A Study of Gan Regrowth on the Micro-Faceted Gan Template Formed by in Situ Hcl Etching

High-quality Nonpolara-Plane GaN Epitaxial Films Grown Onr-Plane Sapphire Substrates by the Combination of Pulsed Laser Deposition and Metal–organic Chemical Vapor Deposition

High-quality crack-free GaN epitaxial films grown on Si substrates by a two-step growth of AlN buffer layer

Improvement of (112̄2) semipolar gan crystal quality with tin interlayer by metal organic vapor phase epitaxy

Growth of A-Plane Gan Films on R-Plane Sapphire by Combining Metal Organic Vapor Phase Epitaxy with the Hydride Vapor Phase Epitaxy

Lateral Epitaxial Overgrowth of Fully Coalesced A-Plane Gan on R-Plane Sapphire