Abstract:The heteroepitaxial growth of vertically aligned gallium nitride (GaN) single-crystalline microrod arrays on silicon substrates was achieved with high reproducibility by using the plasma-enhanced chemical vapor deposition (PECVD) method in the furnace. By reducing the plasma power from 70 to 15 W, the crystal morphology of GaN varied from thin films to microrod arrays with the decreased V/III gas ratio. The growth of GaN crystals occurred in the vertical direction of the substrate and in the lateral direction of the growth axis via the self-catalytic vapor-liquid-solid mechanism (VLS mechanism) and the vapor-solid mechanism (VS mechanism), respectively, contributing to the formation of inverted hexagonal GaN cone microrods. Furthermore, the morphology of inverted hexagonal GaN cone microrods shows extremely small contact areas between the microrods and the substrate, suggesting the potential to solve the problems of stress accumulation and poor crystalline qualities of heteroepitaxy. With the raised growth temperature of GaN from 930 to 980 °C, the material quality was improved and the high crystalline qualities were obtained, owing to the successful surface migration of gallium atoms. However, the density of GaN microrods became lower with the increased growth temperature because the spatial temperature gradient was reduced and the evaporation of gallium was enhanced, leading to fewer gallium atoms precipitating and remaining on the substrate. The growth direction of vertically aligned GaN single-crystalline microrod arrays with the (002) crystal plane is along the [0001] orientation (c axis) and normal to the substrate surface, which may bring about many device applications in future studies.

The Triangular Pits Eliminate of (1120) A-Plane GaN Growth by Metal-Orgamic Chemical Vapor Deposition

Growth of High Quality AlN on Sapphire with Multi-Growth Approaches

Control of GaN inverted pyramids growth on c-plane patterned sapphire substrates

Growth of Nonpolar A-Plane GaN on Nano-Patterned R-Plane Sapphire Substrates

"WM"-Shaped Growth of GaN on Patterned Sapphire Substrates

Study of (112̄0) non polar a-plane GaN on the (11-02) r-plane sapphire

The growth and characterization of GaN grown on an Al2O3 coated (0 0 1) Si substrate by metalorganic vapor phase epitaxy

Effects of V/III Ratio on the Growth of a -Plane GaN Films

Nucleation Mechanism of GaN Growth on Wet Etched Pattern Sapphire Substrates

Structural and Optical Investigation of GaN Grown by Metal-Organic Chemical Vapor Deposition

Gan Grown on Ain/Sapphire Templates

Epitaxial growth of semi-polar (11–22) plane AlInGaN quaternary alloys on m-plane (10-10) sapphire substrates

Study on a-Plane GaN Thin Films Growth by MOCVD and Its r-Plane Anisotropy

Dislocation Reduction Through Nucleation and Growth Selectivity of Metal-Organic Chemical Vapor Deposition GaN

The Growth of High-Quality and Self-Separation GaN Thick-Films by Hydride Vapor Phase Epitaxy

Heteroepitaxial Growth of Vertically-Aligned GaN Single-Crystalline Microrod Arrays on Silicon Substrates

Reduction of hexagonal defects in N-polar AlGaN epitaxial layers grown with reformed pulsed-flow technology

Enhancing two-dimensional growth of high-temperature AlN buffer to improve the quality of GaN on Si grown by ex situ two-step method

Geometrically-Controlled Microscale Patterning and Epitaxial Lateral Overgrowth of Nitrogen-Polar GaN

Etch Pits and Threading Dislocations in GaN Films Grown by Metal-Organic Chemical Vapour Deposition

Low-temperature growth of high-quality a-plane GaN epitaxial films on lattice-matched LaAlO3 substrates