Abstract:The heteroepitaxial growth of vertically aligned gallium nitride (GaN) single-crystalline microrod arrays on silicon substrates was achieved with high reproducibility by using the plasma-enhanced chemical vapor deposition (PECVD) method in the furnace. By reducing the plasma power from 70 to 15 W, the crystal morphology of GaN varied from thin films to microrod arrays with the decreased V/III gas ratio. The growth of GaN crystals occurred in the vertical direction of the substrate and in the lateral direction of the growth axis via the self-catalytic vapor-liquid-solid mechanism (VLS mechanism) and the vapor-solid mechanism (VS mechanism), respectively, contributing to the formation of inverted hexagonal GaN cone microrods. Furthermore, the morphology of inverted hexagonal GaN cone microrods shows extremely small contact areas between the microrods and the substrate, suggesting the potential to solve the problems of stress accumulation and poor crystalline qualities of heteroepitaxy. With the raised growth temperature of GaN from 930 to 980 °C, the material quality was improved and the high crystalline qualities were obtained, owing to the successful surface migration of gallium atoms. However, the density of GaN microrods became lower with the increased growth temperature because the spatial temperature gradient was reduced and the evaporation of gallium was enhanced, leading to fewer gallium atoms precipitating and remaining on the substrate. The growth direction of vertically aligned GaN single-crystalline microrod arrays with the (002) crystal plane is along the [0001] orientation (c axis) and normal to the substrate surface, which may bring about many device applications in future studies.

Geometrically-Controlled Microscale Patterning and Epitaxial Lateral Overgrowth of Nitrogen-Polar GaN

Control of GaN inverted pyramids growth on c-plane patterned sapphire substrates

Growth of High-Quality Nitrogen-Polar GaN Film by Two-Step High-Temperature Method

Lateral Epitaxial Overgrowth of Nitrogen Polar GaN on Smooth Nitrogen Polar GaN Templates by Metalorganic Chemical Vapor Deposition

Epitaxial Lateral Overgrowth of Nitrogen-Polar (0001̅) GaN by Metalorganic Chemical Vapor Deposition

Growth of GaN epitaxial films on polycrystalline diamond by metal-organic vapor phase epitaxy

Heteroepitaxial Growth of Vertically-Aligned GaN Single-Crystalline Microrod Arrays on Silicon Substrates

Nucleation Mechanism for Epitaxial Growth of GaN on Patterned Sapphire Substrates

Morphology Evolution of MOCVD Grown GaN Epitaxial Layers on Nanopss

Defects in GaN Pyramids Grown on Si(111) Substrates by Selective Lateral Overgrowth

Lateral Epitaxial Overgrowth of GaN Films on Patterned Sapphire Substrates Fabricated by Wet Chemical Etching

MOCVD Growth of Device-Quality GaN on Sapphire Using a Three-Step Approach

RETRACTED: High Quality N-polar GaN Two-Dimensional Growth on C-Plane Sapphire by Metalorganic Vapor Phase Epitaxy

Investigation of nanopatterned c-plane sapphire Substrates for Growths of polar and nonpolar GaN epilayers

Nitrogen-polar growth of AlN on vicinal (0001) sapphire by MOVPE

Crystallographic Plane and Topography-Dependent Growth of Semipolar InGaN Nanorods on Patterned Sapphire Substrates by Molecular Beam Epitaxy

Reduction of structural defects in a -plane GaN epitaxy by use of periodic hemispherical patterns in r -plane sapphire substrates

Hot-Wall MOCVD for High-Quality Homoepitaxy of GaN: Understanding Nucleation and Design of Growth Strategies

Selective area growth of GaN nanowires and nanofins by molecular beam epitaxy on heteroepitaxial diamond (001) substrates

Growth Evolution and Microstructural Characterization of Semipolar (112̄2) GaN Selectively Grown on Etched R-Plane Sapphire

Epitaxial growth of nonpolar GaN films on r -plane sapphire substrates by pulsed laser deposition