Abstract:The surface orientation can have profound effects on the atomic-scale processes of crystal growth, and is essential to such technologies as GaN-based light-emitting diodes and high-power electronics. We investigate the dependence of homoepitaxial growth mechanisms on the surface orientation of a hexagonal crystal using kinetic Monte Carlo simulations. To model GaN metal-organic vapor phase epitaxy, in which N species are supplied in excess, only Ga atoms on a hexagonal close-packed (HCP) lattice are considered. The results are thus potentially applicable to any HCP material. Growth behaviors on c-plane ${(0 0 0 1)}$ and m-plane ${(0 1 \overline{1} 0)}$ surfaces are compared. We present a reciprocal space analysis of the surface morphology, which allows extraction of growth mode boundaries and direct comparison with surface X-ray diffraction experiments. For each orientation we map the boundaries between 3-dimensional, layer-by-layer, and step flow growth modes as a function of temperature and growth rate. Two models for surface diffusion are used, which produce different effective Ehrlich-Schwoebel step-edge barriers, and different adatom diffusion anisotropies on m-plane surfaces. Simulation results in agreement with observed GaN island morphologies and growth mode boundaries are obtained. These indicate that anisotropy of step edge energy, rather than adatom diffusion, is responsible for the elongated islands observed on m-plane surfaces. Island nucleation spacing obeys a power-law dependence on growth rate, with exponents of -0.24 and -0.29 for m- and c-plane, respectively.

Investigation of nanopatterned c-plane sapphire Substrates for Growths of polar and nonpolar GaN epilayers

Growth of Nonpolar A-Plane GaN on Nano-Patterned R-Plane Sapphire Substrates

Control of GaN inverted pyramids growth on c-plane patterned sapphire substrates

Crystalline Orientation and Anisotropy of Semi-Polar Gan Films Grown on M-Sapphire Substrate by Hydride Vapor Phase Epitaxy

Improvements in characteristics of N-polar Si-doped AlGaN epi-layer grown on mis-oriented c-plane sapphire substrate

Epitaxy N-polar GaN on vicinal Sapphire substrate by MOCVD

Nucleation Mechanism of GaN Growth on Wet Etched Pattern Sapphire Substrates

Study of (112̄0) non polar a-plane GaN on the (11-02) r-plane sapphire

High quality GaN epilayers grown on carbon nanotube patterned sapphire substrate by metal-organic vapor phase epitaxy

Kinetic Monte Carlo simulations of GaN homoepitaxy on c- and m-plane surfaces

Morphology Evolution of MOCVD Grown GaN Epitaxial Layers on Nanopss

Geometrically-Controlled Microscale Patterning and Epitaxial Lateral Overgrowth of Nitrogen-Polar GaN

Structural and Optical Investigation of GaN Grown by Metal-Organic Chemical Vapor Deposition

Defect Structure and Evolution of GaN-Based Light-Emitting Diodes on Planar and Cone-Patterned Sapphire Substrates

Study on a-Plane GaN Thin Films Growth by MOCVD and Its r-Plane Anisotropy

Silane controlled three dimensional GaN growth and recovery stages on a cone-shape nanoscale patterned sapphire substrate by MOCVD

Modulating lateral strain in GaN-based epitaxial layers by patterning sapphire substrates with aligned carbon nanotube films

Exploring GaN crystallographic orientation disparity and its origin on bare and partly graphene-covered $m$-plane sapphire substrates

"WM"-Shaped Growth of GaN on Patterned Sapphire Substrates

Structural and Optical Properties of Nonpolar m-Plane GaN and GaN-Based LEDs on γ-LiAlO <sub>2</sub>