Abstract:In this paper, semi-polar (10-13) and (11-22) GaN layers were fabricated on m-plane sapphire templates by vertical hydride vapor phase epitaxy system. The GaN layer with a thickness of 10 mu m, excluding the thickness of the template. By systematically optimized growth parameters, high quality semi-polar layers were achieved and confirmed by high resolution X-ray diffraction (HR-XRD) measurement, with a rocking curve width of 0.15 for (10-13) GaN layer and 0.31 for (11-22) GaN layer. In-plane epitaxial relationships between (10-13) or (11-22) GaN and sapphire substrates were also determined by HR-XRD. Crystalline anisotropies were shown in two aspects. One is associated with the crystal quality, which can be measured by the full width at half maximum (FWHM) value curves on azimuth Phi angles and originated from the different atom mobility along different crystal directions on growing surface. The other one is associated with defects on the surface, which can be clearly recorded by optical cameras. When defects of epitaxial films accumulate, the shape of FWHM curves dependence on Phi degree changed from M-type to W-type. These two kinds of anisotropic features are closely connected with each other.

Study on a-Plane GaN Thin Films Growth by MOCVD and Its r-Plane Anisotropy

In-Plane Optical Anisotropy of A-Plane Gan Film on R-Plane Sapphire Grown by Metal Organic Chemical Vapour Deposition

Structural and Optical In-Plane Anisotropy of M-Plane GaN

Effects of V/III ratio on species diffusion anisotropy in the MOCVD growth of non-polar α-plane GaN films

Effects of Ⅴ/Ⅲ ratio on species diffusion anisotropy inthe MOCVD growth of non-polar a-plane GaN films

Crystalline Orientation and Anisotropy of Semi-Polar Gan Films Grown on M-Sapphire Substrate by Hydride Vapor Phase Epitaxy

Modulation of Anisotropic Crystalline in A-Plane GaN on HT-AlN Buffer Layer

Growth of Nonpolar A-Plane GaN on Nano-Patterned R-Plane Sapphire Substrates

Crystalline Anisotropy of Β-Ga2o3 Thin Films on a C-Plane GaN Template and a Sapphire Substrate

Optical Anisotropic Properties of M-Plane GaN Film Grown by Metalorganic Chemical Vapor Deposition

Non-polar A-Plane ZnO Films Grown on R-Al2o3 Substrates Using GaN Buffer Layers

Study of (112̄0) non polar a-plane GaN on the (11-02) r-plane sapphire

Analysis of the Anisotropy in Anm-Plane GaN Film Via HVPE on a Γ-Lialo2substrate

Effects of V/III Ratio on the Growth of a -Plane GaN Films

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Anisotropic Defect Structure of GaN Film Grown by MOCVD

Anisotropic Crystallographic Properties, Strain, and Their Effects on Band Structure of M-Plane Gan on Lialo2(100)

Analysis of the Anisotropy in an M-Plane Gan Film Via Hype on A Gamma-Lialo2 Substrate

Analysis of the anisotropy in an m-plane GaN film via HVPE on a γ-LiAlO_2 substrate

Epitaxy N-polar GaN on vicinal Sapphire substrate by MOCVD