Abstract:In this paper a systematic investigation of structural and optical anisotropy of m-plane InN film grown on γ-LiAlO2(1 0 0) substrate by metal organic chemical vapour deposition, which is believed to be much more difficult than molecular beam epitaxy, is presented. The InN film showed pure m-plane phase as confirmed by x-ray diffraction ω/2θ scan together with polarized Raman spectroscopy. The epitaxial relationship between the m-plane InN and the substrate was found to be [0 0 0 1]InN ∥ [0 1 0]LAO and [1 1 − 2 0]InN ∥ [0 0 1]LAO. The inherent film mosaic anisotropy was studied by x-ray rocking curve analysis. Atomic force microscopy revealed that stripe-like features appear on the surface of the m-plane InN film, which originated from the replication of the surface morphological anisotropy of the substrate. Scanning electron microscopy showed blocky surface structures that were indicative of three-dimensional growth mode, which was related to the anisotropic structural mismatch of the film and the foreign substrate. A small direct band gap of ∼0.7 eV of the m-plane InN film was confirmed by low-temperature photoluminescence spectra, which showed evident polarization anisotropy in terms of both intensity and peak energy. Finally, a blue-shift of absorption edge as compared with the photoluminescence peak energy was observed and fully accounted for by the Burstein–Moss effect.

Optical Anisotropic Properties of M-Plane GaN Film Grown by Metalorganic Chemical Vapor Deposition

Structural and Optical In-Plane Anisotropy of M-Plane GaN

In-Plane Optical Anisotropy of A-Plane Gan Film on R-Plane Sapphire Grown by Metal Organic Chemical Vapour Deposition

Non-polar M-Plane GaN Film and Polarized InGaN/GaN LED Grown on LiAlO 2 (001) Substrates

Structural and Optical Properties of Nonpolar m-Plane GaN and GaN-Based LEDs on ?-LiAlO2

Structural and Optical Properties of Nonpolar m-Plane GaN and GaN-Based LEDs on γ-LiAlO <sub>2</sub>

Anisotropic Crystallographic Properties, Strain, and Their Effects on Band Structure of M-Plane Gan on Lialo2(100)

Investigation of Structural and Optical Anisotropy of M-Plane InN Films Grown on Γ-Lialo2(1 0 0) by Metal Organic Chemical Vapour Deposition

Structural And Optical Properties Of Nonpolar M-Plane Gan And Gan-Based Leds On Gamma-Lialo2

Polarization and Temperature Dependence of Photoluminescence of M-Plane GaN Grown on Γ-Lialo2 (100) Substrate

Optical Polarization Characteristics of C-Plane InGaN/GaN Asymmetric Nanostructures

Analysis of the anisotropy in an m-plane GaN film via HVPE on a γ-LiAlO_2 substrate

Analysis of the Anisotropy in Anm-Plane GaN Film Via HVPE on a Γ-Lialo2substrate

Study on a-Plane GaN Thin Films Growth by MOCVD and Its r-Plane Anisotropy

In-plane Anisotropic Photoluminescence of C-plane GaN under Asymmetric Biaxial Strain

Non-polar A-Plane ZnO Films Grown on R-Al2o3 Substrates Using GaN Buffer Layers

Analysis of the Anisotropy in an M-Plane Gan Film Via Hype on A Gamma-Lialo2 Substrate

Photoluminescence and Raman Scattering Signatures of Anisotropic Optical Properties in Freestanding M-, A- and C-Plane GaN Substrates

Optical property studies of GaN films grown by MOCVD

Growth studies of m -GaN layers on LiAlO 2 by MOCVD

Strain Effect on Optical Polarization Properties of a ‐plane GaN on R ‐plane Sapphire