γ-LiAlO2 single crystal: a novel substrate for GaN epitaxy
Xu Ke,Xu Jun,Deng Peizhen,Zhou Yongzong,Zhou Guoqing,Qiu Rongsheng,Fang Zujie
DOI: https://doi.org/10.1016/S0022-0248(98)00469-2
IF: 1.8
1998-01-01
Journal of Crystal Growth
Abstract:γ-LiAlO2 single crystals were expected to act as a promising substrate material for the epitaxy of GaN, the lattice mismatch between LiAlO2 and GaN is only 1.4%. In the present work, γ-LiAlO2 single crystal has been grown using temperature gradient technique (TGT), in which a crucible with a cover was used to prevent the component of charge from vaporizing. The crystal quality was characterized by chemical etching, optical microscope, and high-resolution X-ray diffraction. The LiAlO2 crystal grown by TGT was free from bubbles and inclusions, and the dislocation density measured on (100) crystal plane was about (3.8–6.0)×104cm−2. The main defects were subgrains or mosaic structures, which may be caused by the fluctuation of temperature field in the furnace. Growth of GaN on LiAlO2(100) was tried through MOCVD using H2 as a carrier, the results showed that LiAlO2 substrate was stable enough to stand the high-temperature reductive atmosphere. Since the lattice mismatching between film and substrate was greatly decreased, single-oriented GaN film can be grown on LiAlO2 substrates without using low-temperature buffer layers.