Abstract:The Al doping gallate phosphor (Ga(1-x)Al(x))2O3 : Cr3+ (x = 0, 0.1, 0.2, 0.3, 0.4, 0.5) was synthesized by a high temperature solid-state reaction method. The X-ray diffractions show that the phase of the phosphors remains to be Ga2 O3 structure with increase in the contents of Al3+ ion. Beside, the fact that the X-ray diffraction peak shifts towards big angles with increasing Al3+ ions content shows that Al3+ ions entered the Ga2 O3 lattice. The peaks of the excitation spectra located at 258, 300, 410 and 550 nm are attributed to the band to band transition of the matrix, charge transfer band transition, and 4A2 --> 4T1 and 4A2 --> 4T2 transition of Cr3+ ions, respectively. Those excitation spectrum peak positions show different degrees of blue shift with the increase in the Al3+ ions content. The blue shift of the first two peaks are due to the band gap energy of substrate and the electronegativity between Cr3+ ions and ligands increasing, respectively. The blue shift of the energy level transition of Cr3+ ion is attributed to crystal field strength increasing. The Cr3+ ion luminescence changes from a broadband emission to a narrow-band emission with Al3+ doping, because the emission of Cr3+ ion changed from 4 T2 --> 4A2 to 2E --> 4A2 transition with the crystal field change after Al3+ ions doping. The Al3+ ions doping improved the long afterglow luminescence properties of samples, and the sample showed a longer visible near infrared when Al3+ ions content reaches 0.5. The thermoluminescence curve shows the sample with suitable trap energy level, and this is also the cause of the long afterglow luminescence materials.

Study on the Growth of Pure and Ga3+ Doped γ-LiAlO2 Crystals

Study on Large-size γ-LiAlO2 Single Crystal Grown by Czochralski Technique

Study on the Growth Defects of Γ-Lialo2 Crystal

Growth studies of m -GaN layers on LiAlO 2 by MOCVD

Synthesis of ZnAl 2 O 4 /Α-Al 2 O 3 Complex Substrates and Growth of GaN Films

Growth of GaN single crystal film on ZnO/Al2O3 substrate and its characteristics

Synthesis of ZnAl2O4/alpha-Al2O3 complex substrates and growth of GaN films

Characteristics of 4-Inch (100) Oriented Mg-doped Β-Ga2o3 Bulk Single Crystals Grown by a Casting Method

The growth and characterization of GaN grown on an Al2O3 coated (0 0 1) Si substrate by metalorganic vapor phase epitaxy

The Effect of Gan Single Crystal Substrate Characteristics on Homo-Epitaxial Gan Films

[Structure and luminescence properties of Ga2O3 : Cr3+ by Al doping]

Β-Ga2o3 Thin Film Grown on Sapphire Substrate by Plasma-Assisted Molecular Beam Epitaxy

Effect of Ga3+ ion doping on emission thermal stability and efficiency of MgAl2O4:Cr3+ phosphor

Mocvd Growth and Characterization of Epitaxial Alxga1-Xn Films

MOCVD Epitaxy of α-(AlxGa1−x)2O3 (x =0–100%) on m-Plane Sapphire Substrate

Growth Properties of DopedIn_(0.5)(Ga_(1-x)Al_x)_(0.5)P Alloys

Study on Mg-doped AlGaN Films Grown by Metal Organic Chemical Vapor Deposition

Growth of LiGaO2 as a Substrate of GaN by Temperature Gradient Technique

Improving the quality and properties of GaInSb crystal with Al doping

MOCVD growth and annealing characteristics of Mg-doped AlGaN films

Gan Grown on Ain/Sapphire Templates