Abstract:Bulk β‐(AlxGa1‐x)2O3 crystals are grown by the Czochralski method, with a maximum [Al] = 40 mol% that can be incorporated into β‐Ga2O3 crystal lattice while keeping single crystalline and monoclinic phase. From obtained crystals physical properties (optical, electrical, thermal) are revealed as a function of [Al]. Also, even small Ga incorporation into α‐Al2O3 crystals leads to a phase separation. With comprehensive crystal growth experiments of β‐(AlxGa1‐x)2O3 by the Czochralski method this work concludes a maximum [Al] = 40 mol% (35 mol% in the melt) that can be incorporated into β‐Ga2O3 crystal lattice while keeping single crystalline and monoclinic phase, resulting in the formula of β‐(Al0.4Ga0.6)2O3. Transmission Electron Microscopy (TEM) analysis reveals random distribution of Al across both octahedral and tetrahedral sites. This work has shown, that incorporation of only [Ga] ≥ 5 mol% into α‐Al2O3 crystals leads to a phase separation of (α + θ)‐Al2O3. With electrical measurements this work proves an increase of the electrical resistivity of β‐(AlxGa1‐x)2O3:Mg as compared to β‐Ga2O3:Mg. The static dielectric constant and refractive index both decrease with [Al]. Raman spectra shows a continuous shift and broadening of the peaks, with the low energy optical phonons Ag(3) having a large contribution to a decrease in the electron mobility. Further, Ir incorporation into the crystals decreases with [Al], wherein Ir4+ Raman peak disappears already at [Al] ≥ 15 mol%. Finally, thermal conductivity measurements on β‐(AlxGa1‐x)2O3 crystals show a drastic decrease of its values with [Al], to about 1/3 of the β‐Ga2O3 value at [Al] = 30 mol%.

Study on Large-size γ-LiAlO2 Single Crystal Grown by Czochralski Technique

Study on the Growth of Pure and Ga3+ Doped γ-LiAlO2 Crystals

Study on the Growth Defects of Γ-Lialo2 Crystal

Study on the Growth, Modification and Thermal Properties of Γ-Lialo2 Single Crystals

Synthesis of ZnAl 2 O 4 /Α-Al 2 O 3 Complex Substrates and Growth of GaN Films

Synthesis of ZnAl2O4/alpha-Al2O3 complex substrates and growth of GaN films

Solid‐Solution Limits and Thorough Characterization of Bulk β‐(AlxGa1‐x)2O Single Crystals Grown by the Czochralski Method

Growth studies of m -GaN layers on LiAlO 2 by MOCVD

Growth of GaN single crystal film on ZnO/Al2O3 substrate and its characteristics

The Effect of Gan Single Crystal Substrate Characteristics on Homo-Epitaxial Gan Films

The growth and characterization of GaN grown on an Al2O3 coated (0 0 1) Si substrate by metalorganic vapor phase epitaxy

Study on the growth, modification and thermal properties of y-LIAIO2 single crystals

Two-step growth of m-plane GaN epilayer on LiAlO2 (1 0 0) by metal-organic chemical vapor deposition

Effect of Surface Morphology of c-plane Sapphire Substrate on Quality of γ-LiAlO2 Layer Fabricated by Vapor Transport Equilibration Technique

Influence of Vapor Transport Equilibration on the Crystal Quality and Thermal-Expansion Coefficients of Γ-Lialo2

Crystal Growth, Characterization, and Properties of Nonlinear Optical Crystals of Li 0.5 Ag 0.5 GaTe 2 for Mid-Infrared Applications

MOCVD Epitaxy of α-(AlxGa1−x)2O3 (x =0–100%) on m-Plane Sapphire Substrate

Mocvd Growth and Characterization of Epitaxial Alxga1-Xn Films

Β-Ga2o3 Thin Film Grown on Sapphire Substrate by Plasma-Assisted Molecular Beam Epitaxy

Low-temperature growth of high-quality a-plane GaN epitaxial films on lattice-matched LaAlO3 substrates

Growth of LiGaO2 as a Substrate of GaN by Temperature Gradient Technique