Study on the Growth Defects of Γ-Lialo2 Crystal

杨卫桥,干福熹,邓佩珍,徐军,李杼智,蒋成勇
DOI: https://doi.org/10.3969/j.issn.1000-985x.2002.06.011
2002-01-01
Abstract:LiAlO 2 single crystal is an important kind of substrate to GaN. The growth defects of γ-LiAlO 2 were studied by means of optical micrography and synchrotron radiation topography. The result showed that the main kind of defects in γ-LiAlO 2 crystal are dislocations,inclusions and sub-grain boundary. It was also found that the optical micrography of the two surfaces of γ-LiAlO 2 (100) plate differed from each other distinctly after chemical etch.
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