Study on the Dislocations in GaN Films by Wet-Chemical Etching

Zhao Hong,Han Ping,Mei Qin,Liu Bin,Lu Hai,Xie Zili,Zhang Rong
2008-01-01
Abstract:The dislocations in wetting-chemical etched GaN(0001)/Al2O3 were investgated by scanning electron microscopy(SEM)and cathodeluminescence(CL).The GaN films were etched by melting KOH and NaOH(1∶1)solution with 10% MgO.The optimized etching conditions were 400 ℃,2.5 min.By means of SEM observation,CL spectrum and CL mapping analysis,the distribution properties and density of dislocations in GaN films were obtained.It is found the dislocation spreads along growth direction away from substrates,and the density decreases with increasing thickness.The optical properties of GaN films before and after etching were investigated.From CL mapping,the dislocations are surrounded by bright hexangular pits.The CL spectrum shows the peak position of GaN is redshift caused by strain relaxation along growth direction,and the peak intensity is increasing.
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