Abstract:GaN nanomaterials, as one of the most important third-generation semiconductor materials, have attracted wide attention. In this study, GaN nanowires with square cross section were successfully prepared by microwave plasma chemical vapor deposition system. The diameters of nanowires are from 300 to 500 nm and the lengths from 15 to 20 μm. The results show that the cross section of nanowires could be transformed from triangle into square by adjusting the ratio of Mg to Ga in source materials. X-ray diffraction(XRD)result indicate that the structure of GaN nanowires are agree with the hexagonal wurtzite. X-ray photoelectron spectroscopy (XPS) rusult show that a certain amount of Mg and O impurities incoporated in the square-shaped GaN nanowires. Transmission electron microscopy (TEM) result suggested that square-shaped GaN nanowires had high crystallinity with a growth direction of [\begin{document}$0\bar 110$\end{document}]. The ratio of source materials- and time-depented growth mechanism was also studied. It was suggested that the transformation of the cross section from triangle to square structure should be derived from the growth mechanism change from vapor-liquid-solid(VLS)process to vapor-solid(VS)process. The doped Mg increased the growth rate of the nanowires sidewalls, which led to a symmetrically growth of GaN nanowires along the twin boundaries. GaN nanowires gradually transformed to square structure by auto-catalytic growth. Moreover, the property of field emission were further investigated. The results showed that the turn-on electric field of square-shaped GaN nanowires was 5.2 V/m and a stable field emission property at high electric field. This research provides a new method for the preparation of square-shaped GaN nanowires and a prospective way for the design and fabrication of novel nano-scale devices.

Preparation and Characterization of GaN Micro/nano-Structures by the Electrodeless Photo-Assisted Chemical Etching

Formation of GaN nanostructures with various morphologies by photo-assisted electroless chemical etching

Morphological Evolution and Characterization of GaN Pyramid Arrays Fabricated by Photo-Assisted Chemical Etching

Electrochemical etching of highly conductive GaN single crystals

GaN Hexagonal Pyramids Formed by a Photo-Assisted Chemical Etching Method

The Formation and Characterization of Gan Hexagonal Pyramids

Etch Pits and Threading Dislocations in GaN Films Grown by Metal-Organic Chemical Vapour Deposition

Defect-pit-assisted Growth of GaN Nanostructures: Nanowires, Nanorods and Nanobelts

Preparation, Doping Modulation and Field Emission Properties of Square-Shaped GaN Nanowires

Study on the Dislocations in GaN Films by Wet-Chemical Etching

Faceting mechanisms of GaN nanopillar under KOH wet etching

Metal-assisted Photochemical Etching of GaN Nanowires: the Role of Metal Distribution

Etch-Pits, of Gan Films with Different Etching Methods

Preparation of Gan Nanowires by Nonammonia Method and Their Photoelectronic Properties

Enhanced Wet Etching of Patterned GaN with Ion Implantation

Preparation of Controllable Double-Selective Etched Porous Substrate for HVPE Growth of GaN Crystals with Excellent Optical Properties

Investigation of Dislocations and Defects in Epitaxial Lateral Overgrown GaN by Photoelectrochemical Wet Etching

GaN nanowires prepared by Cu-assisted photoelectron-chemical etching

Analysis of the n-GaN electrochemical etching process and its mechanism in oxalic acid

Application of Wet Chemical Etching in GaN-based Materials

Changing Oblique Angles of Pyramid Facets Fabricated by Wet Etching of N Polar Gan