Abstract:GaN nanomaterials, as one of the most important third-generation semiconductor materials, have attracted wide attention. In this study, GaN nanowires with square cross section were successfully prepared by microwave plasma chemical vapor deposition system. The diameters of nanowires are from 300 to 500 nm and the lengths from 15 to 20 μm. The results show that the cross section of nanowires could be transformed from triangle into square by adjusting the ratio of Mg to Ga in source materials. X-ray diffraction(XRD)result indicate that the structure of GaN nanowires are agree with the hexagonal wurtzite. X-ray photoelectron spectroscopy (XPS) rusult show that a certain amount of Mg and O impurities incoporated in the square-shaped GaN nanowires. Transmission electron microscopy (TEM) result suggested that square-shaped GaN nanowires had high crystallinity with a growth direction of [\begin{document}$0\bar 110$\end{document}]. The ratio of source materials- and time-depented growth mechanism was also studied. It was suggested that the transformation of the cross section from triangle to square structure should be derived from the growth mechanism change from vapor-liquid-solid(VLS)process to vapor-solid(VS)process. The doped Mg increased the growth rate of the nanowires sidewalls, which led to a symmetrically growth of GaN nanowires along the twin boundaries. GaN nanowires gradually transformed to square structure by auto-catalytic growth. Moreover, the property of field emission were further investigated. The results showed that the turn-on electric field of square-shaped GaN nanowires was 5.2 V/m and a stable field emission property at high electric field. This research provides a new method for the preparation of square-shaped GaN nanowires and a prospective way for the design and fabrication of novel nano-scale devices.

The Formation and Characterization of Gan Hexagonal Pyramids

GaN Hexagonal Pyramids Formed by a Photo-Assisted Chemical Etching Method

Morphological Evolution and Characterization of GaN Pyramid Arrays Fabricated by Photo-Assisted Chemical Etching

Preparation and Characterization of GaN Micro/nano-Structures by the Electrodeless Photo-Assisted Chemical Etching

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

The Effect of Gan Single Crystal Substrate Characteristics on Homo-Epitaxial Gan Films

Formation of GaN nanostructures with various morphologies by photo-assisted electroless chemical etching

Fabrication of Dodecagonal Pyramid on Nitrogen Face GaN and Its Effect on the Light Extraction

Changing Oblique Angles of Pyramid Facets Fabricated by Wet Etching of N Polar Gan

A Study of Gan Regrowth on the Micro-Faceted Gan Template Formed by in Situ Hcl Etching

Study on the Formation of Dodecagonal Pyramid on Nitrogen Polar Gan Surface Etched by Hot H3po4

Preparation, Doping Modulation and Field Emission Properties of Square-Shaped GaN Nanowires

Macro-Pyramid in Gan Film

Epitaxy and Optical Properties of InGaN/GaN Multiple Quantum Wells on GaN Hexagonal Pyramids Template

Study of the Defects in GaN Epitaxial Films Grown on Sapphire by HVPE

Preparation of Gan Nanowires by Nonammonia Method and Their Photoelectronic Properties

A Study On Self-Assembled Gan Nanobelts By A New Method: Structure, Morphology, Composition, And Luminescence

Control of GaN inverted pyramids growth on c-plane patterned sapphire substrates

Hvpe Homoepitaxial Growth of High Quality Bulk Gan Using Acid Wet Etching Method and Its Mechanism Analysis

Pyramidal Shape Four V-grooved Silicon Substrate for Enhancing Cubic Phase Gallium Nitride Growth

X-Ray Diffraction Reciprocal Space And Pole Figure Characterization Of Cubic Gan Epitaxial Layers Grown On (001) Gaas By Molecular Beam Epitaxy