Abstract:The heteroepitaxial growth of vertically aligned gallium nitride (GaN) single-crystalline microrod arrays on silicon substrates was achieved with high reproducibility by using the plasma-enhanced chemical vapor deposition (PECVD) method in the furnace. By reducing the plasma power from 70 to 15 W, the crystal morphology of GaN varied from thin films to microrod arrays with the decreased V/III gas ratio. The growth of GaN crystals occurred in the vertical direction of the substrate and in the lateral direction of the growth axis via the self-catalytic vapor-liquid-solid mechanism (VLS mechanism) and the vapor-solid mechanism (VS mechanism), respectively, contributing to the formation of inverted hexagonal GaN cone microrods. Furthermore, the morphology of inverted hexagonal GaN cone microrods shows extremely small contact areas between the microrods and the substrate, suggesting the potential to solve the problems of stress accumulation and poor crystalline qualities of heteroepitaxy. With the raised growth temperature of GaN from 930 to 980 °C, the material quality was improved and the high crystalline qualities were obtained, owing to the successful surface migration of gallium atoms. However, the density of GaN microrods became lower with the increased growth temperature because the spatial temperature gradient was reduced and the evaporation of gallium was enhanced, leading to fewer gallium atoms precipitating and remaining on the substrate. The growth direction of vertically aligned GaN single-crystalline microrod arrays with the (002) crystal plane is along the [0001] orientation (c axis) and normal to the substrate surface, which may bring about many device applications in future studies.

Macro-Pyramid in Gan Film

Defects in GaN Pyramids Grown on Si(111) Substrates by Selective Lateral Overgrowth

The Effect of Gan Single Crystal Substrate Characteristics on Homo-Epitaxial Gan Films

Crystal Structure and Surface Morphology of GaN Thin Films Grown on Different Patterned AlN Substrate Surfaces

Epitaxiall Growth of Cubic and Hexagonal Gan Films on Gaas(001) Substrates by Mbe

GaN Hexagonal Pyramids Formed by a Photo-Assisted Chemical Etching Method

The Formation and Characterization of Gan Hexagonal Pyramids

A Study of Gan Regrowth on the Micro-Faceted Gan Template Formed by in Situ Hcl Etching

Epitaxial Growth And Structural Analysis Of Aln/Gan Heterostructures

Transmission Electron Microscopy and Atomic Force Microscopy Studies of Gan Films Grown on Alas/Gaas(001) Substrates

Microstructures Of Gan Films Laterally Overgrown On Si(111) By Hydride Vapour Phase Epitaxy

Pseudomorphic growth of a thin-GaN layer on the AlN single-crystal substrate using metal organic vapor phase epitaxy

Control of GaN inverted pyramids growth on c-plane patterned sapphire substrates

Structure Shift of GaN Among Nanowall Network, Nanocolumn, and Compact Film Grown on Si (111) by MBE

Understanding the Growth Mechanism of GaN Epitaxial Layers on Mechanically Exfoliated Graphite.

Epitaxial Gan Thin Films Prepared by Polymer-Assisted Deposition

Horizontal Defects Parallel to the Interface in GaN Pyramids

Transmission Electron Microscopy Study of the Microstructure of a GaN Film Grown on Sapphire by Organometallic Vapor Phase Expitaxy

Heteroepitaxial Growth of Vertically-Aligned GaN Single-Crystalline Microrod Arrays on Silicon Substrates

The growth and characterization of GaN grown on an Al2O3 coated (0 0 1) Si substrate by metalorganic vapor phase epitaxy

The Growth of High-Quality and Self-Separation GaN Thick-Films by Hydride Vapor Phase Epitaxy