Abstract:Porous GaN nanopyramids, produced through a combination of selective area growth and electrochemical etching, introduce an exciting new alternative to traditional nanostructures. The precisely controlled porosity within these nanostructure templates offers a substantial advancement for nanoscale light emitting devices, enhancing their performance through superior light extraction, effective defect filtration, and optimal strain relaxation. GaN nanostructures hold significant promise in advancing nanoscale light‐emitting devices. However, significant progress remains elusive, possibly due to the absence of innovative approaches. Beyond the smaller size of GaN nanostructures, the main interest lies in growing InGaN active layers on semi‐ and non‐polar orientations. Nevertheless, it is evident that while leveraging such a method holds initial promise, this approach may eventually reach its limits, prompting the need for fresh perspectives. In this manuscript, electrochemical etching is utilized to fabricate porous GaN nanopyramids. Given the absence of prior studies on electrochemical etching of GaN nanostructures, its etching behavior is investigated, revealing its selectivity concerning doping concentration and geometry. Furthermore, how the choice of electrolyte can differently impact the optical response of the etched template is explored. Subsequently, an InGaN/GaN quantum wells shell is grown as the active region. The significance of the approach is evidenced by a tenfold enhancement in photoluminescence emission. Porous nanopyramids demonstrate a higher internal quantum efficiency of 44.7% and faster radiative recombination time. Additionally, finite difference time domain simulation reveals a twofold increase in light extraction efficiency. This research will lead the way toward the development of a new class of nanostructures offering potential advancements in optoelectronic devices.

GaN Hexagonal Pyramids Formed by a Photo-Assisted Chemical Etching Method

The Formation and Characterization of Gan Hexagonal Pyramids

Morphological Evolution and Characterization of GaN Pyramid Arrays Fabricated by Photo-Assisted Chemical Etching

Preparation and Characterization of GaN Micro/nano-Structures by the Electrodeless Photo-Assisted Chemical Etching

Fabrication of Dodecagonal Pyramid on Nitrogen Face GaN and Its Effect on the Light Extraction

Formation of GaN nanostructures with various morphologies by photo-assisted electroless chemical etching

Epitaxy and Optical Properties of InGaN/GaN Multiple Quantum Wells on GaN Hexagonal Pyramids Template

The Effect of Gan Single Crystal Substrate Characteristics on Homo-Epitaxial Gan Films

Changing Oblique Angles of Pyramid Facets Fabricated by Wet Etching of N Polar Gan

Study on the Formation of Dodecagonal Pyramid on Nitrogen Polar Gan Surface Etched by Hot H3po4

Preparation, Doping Modulation and Field Emission Properties of Square-Shaped GaN Nanowires

Porous GaN Nanopyramids: Advancing Beyond Conventional Nanostructures for High‐Brightness InGaN/GaN Quantum Wells Emission

A Study of Gan Regrowth on the Micro-Faceted Gan Template Formed by in Situ Hcl Etching

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Hvpe Homoepitaxial Growth of High Quality Bulk Gan Using Acid Wet Etching Method and Its Mechanism Analysis

Pyramidal Shape Four V-grooved Silicon Substrate for Enhancing Cubic Phase Gallium Nitride Growth

Geometrically-Controlled Microscale Patterning and Epitaxial Lateral Overgrowth of Nitrogen-Polar GaN

High Optical Quality GaN Nanopillar Arrays

Control of GaN inverted pyramids growth on c-plane patterned sapphire substrates

Homo-epitaxial Growth of High Crystal Quality GaN Thin Films by Plasma Assisted–molecular Beam Epitaxy

Preparation of Controllable Double-Selective Etched Porous Substrate for HVPE Growth of GaN Crystals with Excellent Optical Properties