Abstract:In recent years, metallic nano-light-emitting diode (LED) arrays have gained wide attention as new-generation lighting materials. This study evaluates the optical properties of triangular array Ag nanodisc GaN-LED and analyses its effects on internal radiation and external light extraction of LED by changing the cycle and height of the Ag nanodisc. We use FDTD software for simulation. The results showed that the increase in the spontaneous emission rate depended on the localised surface plasmon (LSP) generated by the Ag nanodisc and the multiple quantum well layer, considering the coupling between the surface plasmon and the dipole enhanced the internal energy. Owing to the optimal structural parameters, the spontaneous emission rate was enhanced by 4.79 times, and the power integral of the internal radiation source increased from 0.037 to 0.177. Furthermore, the enhanced energy from coupling did not radiate outward and was limited to the surface of the Ag nanodisc. Additionally, a two-dimensional photonic crystal structure was embedded in the p-layer to transform the LSP into a radiation plasmon. When the transmittance was 0.32, the top surface power integral increased from 0.021 to 0.131, light output power increased by 5.47 times, and the factor of light extraction efficiency increased by 1.79 times. These results provide practical values that can be applied in optimising the design of high-performance GaN-based LED.

Fabrication of Dodecagonal Pyramid on Nitrogen Face GaN and Its Effect on the Light Extraction

Study on the Formation of Dodecagonal Pyramid on Nitrogen Polar Gan Surface Etched by Hot H3po4

Changing Oblique Angles of Pyramid Facets Fabricated by Wet Etching of N Polar Gan

GaN Hexagonal Pyramids Formed by a Photo-Assisted Chemical Etching Method

Morphological Evolution and Characterization of GaN Pyramid Arrays Fabricated by Photo-Assisted Chemical Etching

Enhanced Light Extraction from a GaN-based Green Light-Emitting Diode with Hemicylindrical Linear Grating Structure.

The Formation and Characterization of Gan Hexagonal Pyramids

Improved performance of GaN-based light emitting diodes with nanopatterned sapphire substrates fabricated by wet chemical etching

Surface-plasmon-enhanced GaN-LED based on the multilayered rectangular nano-grating

High-output power GaN-LED based on surface plasmon enhancement

Ultra High Luminous Efficiency P-Type Surface Defect Structure GaN LED

Size-controllable Nanopyramids Photonic Crystal Selectively Grown on P-Gan for Enhanced Light-Extraction of Light-Emitting Diodes.

Fabrication and Application of Gallium Nitride-Based Two-Dimensional Octagonal Photonic Quasicrystals

Study of GaN Light-Emitting Diodes Obtained by Laser-Assisted Debonding

Excellent wet etching technique using pulsed anodic oxidation for homoepitaxially grown GaN layer

Nano-grooves etching on top of GaN-LED for light extraction enhancement

Light Extraction Improvement from GaN-Based Light-Emitting Diodes with Nano-Patterned Surface Using Anodic Aluminum Oxide Template

Enhanced Performance of InGaN Light-Emitting Diodes Via High-Quality GaN and Embedded Air Voids Grown on Hexagonal 3D Serpentine Mask Sapphire Substrates

Phosphor-Free Nanopyramid White Light-Emitting Diodes Grown On {10(1)Over-Bar1} Planes Using Nanospherical-Lens Photolithography

Nucleation Mechanism of GaN Growth on Wet Etched Pattern Sapphire Substrates

Study of GaN-Based Light-Emitting Diode (LED) With a Hybrid Surface Structure