Abstract:A large amount of attention has been given recently to gallium nitride (GaN) substrates which are considered to be a promising candidate for opto-, high power and high frequency electronic devices due to their wide bandgaps, high carrier mobility, high saturated electron drift velocity and high breakdown field . It is essential to provide a complete damage-free surface to realize the full potential of GaN devices. Chemical mechanism planarization (CMP) is applied to the surface as a final treatment to produce atomic level surface flatness by removing the damage on the surface. However, the removal rate of GaN in CMP with colloidal silica-abrasive-based slurry under acidic slurry pH condition presents a range of ten to a hundred nanometers per hour because of their high mechanical hardness, thermal stability and strong chemical inertness. Thus, improving the CMP removal rate for GaN will lead to an acceleration in the realization of next generation optoelectronics devices on GaN. In this work, a method for facilitating the removal rate as well as obtaining atomically smooth surface of GaN with a novel FeIII-Ligand-based catalyst in hydrogen peroxide (H2O2) solution is presented. Effect of process parameters, such as concentration of H2O2, the mass of FeIII-Ligand-based catalyst in slurry, pH of the slurry and concentration of abrasive particles on the material removal rate (MRR) as well as the surface quality have been studied in details.

Study on the Formation of Dodecagonal Pyramid on Nitrogen Polar Gan Surface Etched by Hot H3po4

Fabrication of Dodecagonal Pyramid on Nitrogen Face GaN and Its Effect on the Light Extraction

Changing Oblique Angles of Pyramid Facets Fabricated by Wet Etching of N Polar Gan

GaN Hexagonal Pyramids Formed by a Photo-Assisted Chemical Etching Method

Morphological Evolution and Characterization of GaN Pyramid Arrays Fabricated by Photo-Assisted Chemical Etching

The Formation and Characterization of Gan Hexagonal Pyramids

Geometrically-Controlled Microscale Patterning and Epitaxial Lateral Overgrowth of Nitrogen-Polar GaN

Preparation and Characterization of GaN Micro/nano-Structures by the Electrodeless Photo-Assisted Chemical Etching

Nucleation Mechanism of GaN Growth on Wet Etched Pattern Sapphire Substrates

Surface-plasmon-enhanced GaN-LED based on the multilayered rectangular nano-grating

Optimization of inductively coupled plasma deep etching of GaN and etching damage analysis

Control of GaN inverted pyramids growth on c-plane patterned sapphire substrates

Characterization of anisotropic wet etching of Gallium Nitride for surface orientations of the crystallographic zone in H 3 P O 4 etchant

Study of GaN Light-Emitting Diodes Obtained by Laser-Assisted Debonding

Impact of Inductively Coupled Plasma Etching Conditions on the Formation of Semi-Polar (\({11\overline{2}2}\)) and Non-Polar (\({11\overline{2}0}\)) GaN Nanorods

Highly efficient and atomic scale polishing of GaN via plasma-based atom-selective etching

High Etch Rate and Smooth Morphology Using a Novel Chemistry in Reactive Ion Etching of GaN

Pyramidal Shape Four V-grooved Silicon Substrate for Enhancing Cubic Phase Gallium Nitride Growth

Formation of GaN nanostructures with various morphologies by photo-assisted electroless chemical etching

Hvpe Homoepitaxial Growth of High Quality Bulk Gan Using Acid Wet Etching Method and Its Mechanism Analysis

Planarization of GaN Using a FeIII-Ligand Based Catalyst in H2O2 Solution to Improve Its Removal Rate