Abstract:INTRODUCTION Gallium nitride (GaN) is of particular interest due to its direct wide band gap energy (3.4 eV), high breakdown field, high electron saturation velocity and outstanding physicochemical properties [1-2]. For device applications, a GaN film is generally prepared by metal organic chemical vapor deposition (MOCVD) on sapphire substrates. However, in these heteroepitaxial GaN layers, the lattice and thermal mismatch between GaN and sapphire leads to a large number of dislocations [3]. As a result, flat, clean and undamaged surface is essential to form homo-epitaxial GaN layers with a low dislocation density [4]. However, GaN is very difficult to achieve an ideal polishing efficiency because of its high hardness and stable chemical properties [5]. Mechanical polishing with hard abrasives such as diamond and alumina particles can achieve flatness rapidly, but it can introduce scratch damages [6]. Wet etching can planarize GaN surface without damage by using photo electrochemical treatment, hot phosphoric acid, and molten KOH [7], but it produces rough surface. An etching method, which termed catalyst-referred etching (CARE) has been reported to produce an atomically flat damagefree surface of GaN [8], but the removal rate was just 3.4-3.8 nm/h [5]. Chemical-mechanical polishing (CMP) is considered to be an effective method to realize atomic-level smooth and damages free surface of materials. The studies of Hayashi et al.[9] suggested the importance of the selection of abrasive particles and led to the conclusion that abrasive should be softer than GaN to suppress the introduction of sub-surface damage layers. Colloidal silica based slurry is one of the possible candidates to achieve a damage free surface with a true CMP process as colloidal silica is much softer than GaN [10]. Hideo Aida et al. [11] reported the CMP process of gallium face of GaN with colloidal silica based slurry. In their studies, there were a lot of scratches generated during polishing process, which under the condition of abrasive particle size and concentration of 40nm and 40% respectively. It took him about 150 h to obtain damage-free surface. In our previous published work, we got damage-free surface within 9 h by using Al2O3 and colloidal silica slurry respectively [12]. The purpose of this work is to make clear of the principal influence factors in scratches on the surface of GaN during CMP process, to fulfill controllable and optimization CMP process, and provide a reference basis for the material removal mechanism of GaN.

Highly efficient and atomic scale polishing of GaN via plasma-based atom-selective etching

Towards atomic-scale smooth surface manufacturing of β -Ga 2 O 3 via highly efficient atmospheric plasma etching

Pulsed N2 Plasma Surface Treatment for AlGaN/GaN HEMTs Prior to PECVD SiNx Passivation to Reduce Plasma Damage

Chemical Etching of Freestanding N-polar GaN in Control of the Surface Morphology

Thinning of N-face GaN (0001 ¯) Samples by Inductively Coupled Plasma Etching and Chemomechanical Polishing

Planarization of GaN Using a FeIII-Ligand Based Catalyst in H2O2 Solution to Improve Its Removal Rate

Optimization of inductively coupled plasma deep etching of GaN and etching damage analysis

In-situ Investigation into the Atomic-Scale Removal Behavior of Gallium Nitride

Analysis of scratches generated on gan substrates during polishing

A Novel Strategy Achieving GaN Ultra-Smooth Surface via a Square, Flat Top Beam Shaped Femtosecond Laser Processing Combined with Chemical Mechanical Polishing

Atomically Smooth Gallium Nitride Surface Prepared by Chemical-Mechanical Polishing with Different Abrasives

Enhancement Mechanism of Chemical Mechanical Polishing for GaN Based on Electro-Fenton Reaction

Highly Selective Dry Etching of GaN over AlGaN Using Inductively Coupled Cl2/N2/O2 Plasmas

Highly Selective Dry Etching of Gan over Algan Using Inductively Coupled Cl-2/N-2/O-2 Plasmas

A synergistic polishing technology by mixed abrasives with photocatalysis and fenton reaction

A Novel Atomic-Level Post-Etch-Surface-Reinforcement Process for High-Performance p-GaN Gate HEMTs Fabrication

Performance Recovery of p‐GaN Etch‐Induced Degradation via Atomic Layer Deposition In Situ N2 Plasma and Postanneal‐Assisted Passivation

Chemical Mechanical Polishing of Freestanding GaN Substrates

Control of Inductively Coupled Plasma Etching GaN Sidewall Profiles and Etch Rate

Investigation on the Surface Characterization of Ga-faced GaN after Chemical-Mechanical Polishing