Abstract:The processing of N-polar GaN (0001 ¯) samples has been studied, motivated by applications in which extensive back side thinning of freestanding GaN (FS-GaN) substrates is required. Experiments were conducted on FS-GaN from two commercial sources, in addition to epitaxial GaN with the N-face exposed by a laser lift-off process. The different types of samples produced equivalent results. Surface morphologies were examined over relatively large areas, using scanning electron microscopy and stylus profiling. The main focus of this study was on inductively coupled plasma (ICP) etch processes, employing Cl2∕Ar or Cl2∕BCl3Ar gas mixtures. Application of a standard etch recipe, optimized for feature etching of Ga-polar GaN (0001) surfaces, caused severe roughening of N-polar samples and confirmed the necessity for specific optimization of etch conditions for N-face material. A series of recipes with a reduced physical (sputter-based) contribution to etching allowed average surface roughness values to be consistently reduced to below 3nm. Maximum N-face etch rates of 370–390nm∕min have been obtained in recipes examined to date. These are typically faster than etch rates obtained on Ga-face samples under the same conditions and adequate for the process flows of interest. Mechanistic aspects of the ICP etch process and possible factors contributing to residual surface roughness are discussed. This study also included work on chemomechanical polishing (CMP). The optimized CMP process had stock removal rates of ∼500nm∕h on the GaN N face. This was much slower than the ICP etching but showed the important capability of recovering smooth surfaces on samples roughened in previous processing. In one example, a surface roughened by nonoptimized ICP etching was smoothed to give an average surface roughness of ∼2nm.

Changing Oblique Angles of Pyramid Facets Fabricated by Wet Etching of N Polar Gan

Study on the Formation of Dodecagonal Pyramid on Nitrogen Polar Gan Surface Etched by Hot H3po4

Fabrication of Dodecagonal Pyramid on Nitrogen Face GaN and Its Effect on the Light Extraction

Morphological Evolution and Characterization of GaN Pyramid Arrays Fabricated by Photo-Assisted Chemical Etching

GaN Hexagonal Pyramids Formed by a Photo-Assisted Chemical Etching Method

Characterization of anisotropic wet etching of Gallium Nitride for surface orientations of the crystallographic zone in H 3 P O 4 etchant

The Formation and Characterization of Gan Hexagonal Pyramids

Faceting mechanisms of GaN nanopillar under KOH wet etching

Preparation and Characterization of GaN Micro/nano-Structures by the Electrodeless Photo-Assisted Chemical Etching

Geometrically-Controlled Microscale Patterning and Epitaxial Lateral Overgrowth of Nitrogen-Polar GaN

Control of GaN inverted pyramids growth on c-plane patterned sapphire substrates

Selective Etching of Gan Polar Surface in Potassium Hydroxide Solution Studied by X-Ray Photoelectron Spectroscopy

Investigation of Etch Rate Distribution by Micro-hemisphere for the Anisotropic Wet Etching of Ga-Face Gallium Nitride Crystal

Electrochemical etching of highly conductive GaN single crystals

Analysis of Wet-Etched Structures on R-Plane Substrates of Sapphire in the Etchant of Sulfuric Acid and Phosphoric Acid

Growth of N-Polar Gan on Vicinal Sapphire Substrate by Metal Organic Chemical Vapor Deposition

Nucleation Mechanism of GaN Growth on Wet Etched Pattern Sapphire Substrates

Preparation of Controllable Double-Selective Etched Porous Substrate for HVPE Growth of GaN Crystals with Excellent Optical Properties

Thinning of N-face GaN (0001 ¯) Samples by Inductively Coupled Plasma Etching and Chemomechanical Polishing

Highly efficient and atomic scale polishing of GaN via plasma-based atom-selective etching

Vertical nanoporous GaN substrates for photonic engineering: Lu2O3:Eu single crystal thin films as an example