Abstract:A phase separation lithography (PSL) based on polymer blend provides an extremely simple, low-cost, and high-throughput way to fabricate wafer-scale disordered nanopatterns. This method was introduced to fabricate nanopatterned sapphire substrates (NPSSs) for GaN-based light-emitting diodes (LEDs). The PSL process only involved in spin-coating of polystyrene (PS)/polyethylene glycol (PEG) polymer blend on sapphire substrate and followed by a development with deionized water to remove PEG moiety. The PS nanoporous network was facilely obtained, and the structural parameters could be effectively tuned by controlling the PS/PEG weight ratio of the spin-coating solution. 2-in. wafer-scale NPSSs were conveniently achieved through the PS nanoporous network in combination with traditional nanofabrication methods, such as O2 reactive ion etching (RIE), e-beam evaporation deposition, liftoff, and chlorine-based RIE. In order to investigate the performance of such NPSSs, typical blue LEDs with emission wavelengths of ~450 nm were grown on the NPSS and a flat sapphire substrate (FSS) by metal–organic chemical vapor deposition, respectively. The integral photoluminescence (PL) intensity of the NPSS LED was enhanced by 32.3 % compared to that of the FSS-LED. The low relative standard deviation of 4.7 % for PL mappings of NPSS LED indicated the high uniformity of PL data across the whole 2-in. wafer. Extremely simple, low cost, and high throughput of the process and the ability to fabricate at the wafer scale make PSL a potential method for production of nanopatterned sapphire substrates.

Analysis of Wet-Etched Structures on R-Plane Substrates of Sapphire in the Etchant of Sulfuric Acid and Phosphoric Acid

Diffractive Characteristics of Laser Assisted Chemical Etching GaAs

Investigation of Etch Rate Distribution by Micro-hemisphere for the Anisotropic Wet Etching of Ga-Face Gallium Nitride Crystal

Characterization of anisotropic wet etching of Gallium Nitride for surface orientations of the crystallographic zone in H 3 P O 4 etchant

Fabrication of Volcano-Shaped Nano-Patterned Sapphire Substrates Using Colloidal Self-Assembly and Wet Chemical Etching

A Systematic Study on Dry Etching Process of Germanium for Ge 3D-Fets Applications

The effect of inductively-coupled-plasma reactive ion etching power on the etching rate and the surface roughness of a sapphire substrate

Morphology and Defect of A-Gan Grown by Metal Orgamic Chemical Vapor Deposition

Changing Oblique Angles of Pyramid Facets Fabricated by Wet Etching of N Polar Gan

Nucleation Mechanism of GaN Growth on Wet Etched Pattern Sapphire Substrates

Wet Etching in β-Ga2O3 Bulk Single Crystal

A new surface-polishing and defect-revealing etchant for sapphire

Sapphire Selective Laser Etching Dependence on Radiation Wavelength and Etchant

Wafer-scale synthesis of a morphologically controllable silicon ordered array as a platform and its SERS performance

Wet etching in beta-Ga2O3 bulk single crystals

Etch and growth rates of GaN for surface orientations in the crystallographic zone: Step flow and terrace erosion/filling via the Continuous Cellular Automaton

Control of GaN inverted pyramids growth on c-plane patterned sapphire substrates

Surface micro-texture on sapphire fabricated by laser ablation trajectory regulation

Etch-Pits, of Gan Films with Different Etching Methods

Growth of Nonpolar A-Plane GaN on Nano-Patterned R-Plane Sapphire Substrates

Fabrication of Wafer-Scale Nanopatterned Sapphire Substrate Through Phase Separation Lithography