Abstract:Epitaxial growth of \k{appa}-phase Ga2O3 thin films are investigated on c-plane sapphire, GaN- and AlNon-sapphire, and (100) oriented yttria stabilized zirconia (YSZ) substrates via metalorganic chemical vapor deposition (MOCVD). The structural and surface morphological properties are investigated by comprehensive material characterization. Phase pure \k{appa}-Ga2O3 films are successfully grown on GaN-, AlN-on sapphire, and YSZ substrates through a systematical tuning of the growth parameters including the precursor molar flow rates, chamber pressure and growth temperature, whereas the growth on c-sapphire substrates leads to a mixture of \b{eta}- and \k{appa}polymorphs of Ga2O3 under the investigated growth conditions. The influence of the crystalline structure, surface morphology and roughness of \k{appa}-Ga2O3 films grown on different substrates are investigated as a function of precursor flow rate. High resolution scanning transmission electron microscopy (HR-STEM) imaging of \k{appa}-Ga2O3 films reveals abrupt interfaces between the epitaxial film and the sapphire, GaN and YSZ substrates. The growth of single crystal orthorhombic \k{appa}Ga2O3 films is confirmed by analyzing the STEM nano-diffraction pattern. The chemical composition, surface stoichiometry, and the bandgap energies of \k{appa}-Ga2O3 thin films grown on different substrates are studied by high resolution x-ray photoelectron spectroscopy (XPS) measurements. The type-II (staggered) band alignments at three interfaces between \k{appa}-Ga2O3 and c-sapphire, AlN, and YSZ substrates are determined by XPS, with the exception of \k{appa}-Ga2O3/GaN interface, which shows type I (straddling) band alignment.

Morphology and Defect of A-Gan Grown by Metal Orgamic Chemical Vapor Deposition

Etch Pits and Threading Dislocations in GaN Films Grown by Metal-Organic Chemical Vapour Deposition

Study of the Defects in GaN Epitaxial Films Grown on Sapphire by HVPE

Etch-Pits, of Gan Films with Different Etching Methods

Crystal Defects in Gan on (0001) Sapphire

The Effect of Gan Single Crystal Substrate Characteristics on Homo-Epitaxial Gan Films

A Study of Gan Regrowth on the Micro-Faceted Gan Template Formed by in Situ Hcl Etching

Morphology Evolution of MOCVD Grown GaN Epitaxial Layers on Nanopss

The Effects of Sapphire Nitridation on GaN Growth by Metalorganic Chemical Vapour Deposition

Anisotropic Defect Structure of GaN Film Grown by MOCVD

In-Plane Optical Anisotropy of A-Plane Gan Film on R-Plane Sapphire Grown by Metal Organic Chemical Vapour Deposition

Gan Grown on Ain/Sapphire Templates

Preparation and Characterization of GaN Micro/nano-Structures by the Electrodeless Photo-Assisted Chemical Etching

MOCVD growth and band offsets of \k{appa}-phase Ga2O3 on sapphire, GaN, AlN and YSZ substrates

The Growth and Characterization of GaN Films on Cone-Shaped Patterned Sapphire by MOCVD

Evolution and Control of Dislocations in Gan Grown on Cone-Patterned Sapphire Substrate by Metal Organic Vapor Phase Epitaxy

Growth of N-Polar Gan on Vicinal Sapphire Substrate by Metal Organic Chemical Vapor Deposition

Etch‐pits and Threading Dislocations in Thick LEO GaN Films on Sapphire Grown by MOCVD

Microstructures of GaN films grown by low pressure metal-organic vapor phase epitaxy on sapphire substrates

Structural and Optical Investigation of GaN Grown by Metal-Organic Chemical Vapor Deposition

Comparison of surface morphologies in GaN films grown by rf-MBE and MOCVD on vicinal sapphire (0001) substrates