Abstract:In this paper, semi-polar (10-13) and (11-22) GaN layers were fabricated on m-plane sapphire templates by vertical hydride vapor phase epitaxy system. The GaN layer with a thickness of 10 mu m, excluding the thickness of the template. By systematically optimized growth parameters, high quality semi-polar layers were achieved and confirmed by high resolution X-ray diffraction (HR-XRD) measurement, with a rocking curve width of 0.15 for (10-13) GaN layer and 0.31 for (11-22) GaN layer. In-plane epitaxial relationships between (10-13) or (11-22) GaN and sapphire substrates were also determined by HR-XRD. Crystalline anisotropies were shown in two aspects. One is associated with the crystal quality, which can be measured by the full width at half maximum (FWHM) value curves on azimuth Phi angles and originated from the different atom mobility along different crystal directions on growing surface. The other one is associated with defects on the surface, which can be clearly recorded by optical cameras. When defects of epitaxial films accumulate, the shape of FWHM curves dependence on Phi degree changed from M-type to W-type. These two kinds of anisotropic features are closely connected with each other.

Anisotropic Defect Structure of GaN Film Grown by MOCVD

Study on a-Plane GaN Thin Films Growth by MOCVD and Its r-Plane Anisotropy

Characterization of Crystal Lattice Constant and Dislocation Density of Crack-Free GaN Films Grown on Si(1 1 1)

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Microstructures of GaN films grown by low pressure metal-organic vapor phase epitaxy on sapphire substrates

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

Microstructures of GaN films grown by low pressure metal-organic vapor phase epitaxy on (0 1 1 2) sapphire substrates

Transmission Electron Microscopy Study of the Microstructure of a GaN Film Grown on Sapphire by Organometallic Vapor Phase Expitaxy

Study of the Defects in GaN Epitaxial Films Grown on Sapphire by HVPE

Crystalline Orientation and Anisotropy of Semi-Polar Gan Films Grown on M-Sapphire Substrate by Hydride Vapor Phase Epitaxy

Electron microscopy analysis of GaN/GaAs cubic heterostructure grown by MBE

Comparison of surface morphologies in GaN films grown by rf-MBE and MOCVD on vicinal sapphire (0 0 0 1) substrates

Comparison of surface morphologies in GaN films grown by rf-MBE and MOCVD on vicinal sapphire (0001) substrates

Optical Anisotropic Properties of M-Plane GaN Film Grown by Metalorganic Chemical Vapor Deposition

Crystalline Anisotropy of Β-Ga2o3 Thin Films on a C-Plane GaN Template and a Sapphire Substrate

Mosaic structure in epitaxial GaN film varying with thickness

Study on the Dislocation of Epitaxial m-GaN Films Revealed by High Resolution X-Ray Diffration

Etch Pits and Threading Dislocations in GaN Films Grown by Metal-Organic Chemical Vapour Deposition

In-Plane Optical Anisotropy of A-Plane Gan Film on R-Plane Sapphire Grown by Metal Organic Chemical Vapour Deposition

Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films