Abstract:As well-known,heteroepitaxial growth on sapphire is mainly employed to obtain optoelectronic(devices) because there is no suitable substrate matching with GaN.Therefore,the GaN layer suffers from a stress due to large difference in lattice constants and thermal expansion coefficients between the GaN and sapphire.To improve the quality of devices,the epitaxial lateral overgrowth(ELO) technique is applied to GaN.ELO-GaN on patterned SiO_2/GaN/α-Al_2O_3 substrate is grown by metalorganic chemical vapor deposition(MOCVD).First,a high quality 3 μm thick layer of GaN is grown by MOCVD.Next,standard deposition and photolithographic techniques are employed to prepare a set of parallel SiO_2 stripes oriented along a(〈11-00〉) GaN crystal direction separated by window areas which expose the underlying GaN.A second deposition of GaN onto this patterned substrate is then initiated.During the initial GaN growth,the SiO_2 stripes function as nonwettable surfaces and no GaN deposition occurs on them.However,once the GaN film growth from the window stripes reaches the tops of the SiO_2 stripes,epitaxial lateral overgrowth of GaN commences.The GaN thickness of the second step growth is about 10 μm.The results of a systematic study of the ELO-GaN on sapphire are reported.Atomic force microscopy(AFM) images showed that the surface of ELO-GaN is smooth and that there are linear-configuration hillocks in the middle of mask region,which are caused by the misorientation of crystalline when the ELO-GaN coalesce above the masks.The X-ray diffraction(XRD) curve revealed that the tilts in the(〈11-20〉) direction between GaN in window regions and mask regions are about 1.2°.Raman scattering spectrum revealed that the stress in the mask region is smaller than that in the window region and also the quality of GaN is much higher in the mask region.As a result,the quality of GaN crystalloid is effectively improved by MOCVD using the ELO technique.

Mosaic structure in epitaxial GaN film varying with thickness

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Mosaic Structure Evolution in Gan Films with Annealing Time Grown by Metalorganic Chemical Vapour Deposition

Structural Properties of GaN(0001) Epitaxial Layers Revealed by High Resolution X-ray Diffraction

Twist Angle of Mosaic Structure in GaN Films Determined by X-ray Diffraction

Thickness Measurement of GaN Films by X-ray Diffraction

Study on the Dislocation of Epitaxial m-GaN Films Revealed by High Resolution X-Ray Diffration

Microstructure and Strain Analysis of GaN Epitaxial Films Using In-Plane Grazing Incidence X-Ray Diffraction

Transmission Electron Microscopy Study of the Microstructure of a GaN Film Grown on Sapphire by Organometallic Vapor Phase Expitaxy

Morphology Evolution of MOCVD Grown GaN Epitaxial Layers on Nanopss

Mosaic Structure and Its Influence on Carrier Mobility in Undoped Hexagonal GaN Thin Film

Anisotropic Defect Structure of GaN Film Grown by MOCVD

Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films

Structural Characterization of Epitaxial Lateral Overgrowth GaN by MOCVD

Microstructures of GaN films grown by low pressure metal-organic vapor phase epitaxy on sapphire substrates

Epitaxy N-polar GaN on vicinal Sapphire substrate by MOCVD

Microstructures of GaN films grown by low pressure metal-organic vapor phase epitaxy on (0 1 1 2) sapphire substrates

Microstructure and Physical Properties of GaN Films on Sapphire Substrates

Etch Pits and Threading Dislocations in GaN Films Grown by Metal-Organic Chemical Vapour Deposition

Defect Cluster-Induced X-Ray Diffuse Scattering in GaN Films Grown by MOCVD

Epitaxiall Growth of Cubic and Hexagonal Gan Films on Gaas(001) Substrates by Mbe