Abstract:GaN and its related Ⅲ - Ⅴ alloys have received much attention in recent years for their potential ability in short-wavelength light emitting diodes, laser diodes and photodetectors. However, due to the lack of a suitable latticematched bulk substrate, they are usually grown on Al2O3 or SiC substrates with a high density of threading dislocations (TDs). The origin of these dislocations has been suggested to be due to a peculiar growth mode-mosaic structure which can be characterized by means of tilt and twist angles. For wurtzite GaN the mean tilt angle of mosaic structure is related to the FWHM of (0002) diffraction peak,which can be easily measured by using XRD. Unfortunately, the twist of lattice planes is difficult to be measured directly. High-resolution X-ray diffraction was used to determine the twist angle of mosaic structure in GaN epitaxial layers grown on sapphire by metal-organic chemical vapor deposition (MOCVD). Rocking curves of five planes were investigated, (0002); (10(-1)3); (10(-1)2); (10(-1)1 ); and (20(-2)1) respectively. Pseudo-Voigt function was used to simulate the rocking-curve of every plane. The twist angles of GaN layers were easily obtained by extrapolating the full width at half maximum (FWHM) of diffraction peak of the planes. The twist angles of the films measured directly by φ-scans of the (1(-1)00) reflection in grazing-incidence X-ray diffraction (GIXRD) agree well with the extrapolated results. As far as we know, it's the first time that the extrapolated method was checked to be valid in this material, and the results are useful for the further study of GaN films.

Mosaic Structure Evolution in Gan Films with Annealing Time Grown by Metalorganic Chemical Vapour Deposition

Effect of long anneals on the densities of threading dislocations in GaN films grown by metal-organic chemical vapor deposition

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

Mosaic structure in epitaxial GaN film varying with thickness

Microstructure Evolution in Metal-organic Vapor Phase Epitaxy-Grown GaN with Different Low-Temperature Buffer Layer Annealing Time

Effects of Post-Annealing Treatment on the Structural and Optical Properties of Cubic Mg Chi Zn1-Chi O Thin Films Grown on Sapphire

The Surface Morphology Evolution of GaN Nucleation Layer during Annealing and Its Influence on the Crystal Quality of GaN Films

Structure Dependence of Magnetic Properties for Annealed GaMnN Films Grown by MOCVD

Twist Angle of Mosaic Structure in GaN Films Determined by X-ray Diffraction

Influence of annealing on microstructures and photoluminescence of nano-composite silicon film

Etch Pits and Threading Dislocations in GaN Films Grown by Metal-Organic Chemical Vapour Deposition

Segregations and desorptions of Ge atoms in nanocomposite Si1−xGex films during high-temperature annealing

Mosaic Structure and Its Influence on Carrier Mobility in Undoped Hexagonal GaN Thin Film

Effect of Annealing on Thermal Expansion Behavior of Free-Standing GaN

High-temperature annealing induced evolution of strain in AlN epitaxial films grown on sapphire substrates

Impact of annealing temperature on structural, electrical and optical properties of epitaxial GaN thin films grown on sapphire substrates by PA-MBE

Anisotropic Defect Structure of GaN Film Grown by MOCVD

Morphology Of Threading Dislocations In High-Resistivity Gan Films Observed By Transmission Electron Microscopy

In-Plane Optical Anisotropy of A-Plane Gan Film on R-Plane Sapphire Grown by Metal Organic Chemical Vapour Deposition

Effect of Grain Coalescence on Dislocation and Stress Evolution of GaN Films Grown on Nanoscale Patterned Sapphire Substrates

Influence of annealing on ZnO thin film grown by plasma-assisted MOCVD