Abstract:The mechanisms associated with electrical conduction through individual threading dislocations (TDs) in a Na-flux GaN crystal grown with a multipoint-seed-GaN technique were investigated by conductive atomic force microscopy (C-AFM). To focus on individual TDs, dislocation-related etch pits (DREPs) were formed on the Na-flux GaN surface by wet chemical etching, after which microscopic Pt electrodes were locally fabricated on the DREPs to form conformal contacts to the Na-flux GaN crystal, using electron beam assisted deposition. The C-AFM data clearly demonstrate that the leakage current flows through the individual TD sites. It is also evident that the leakage current and the electrical conduction mechanism vary significantly based on the area within the Na-flux GaN crystal where the TDs are formed. These regions include the c-growth sector (cGS) in which the GaN grows in the [0001] direction on top of the point-seed with a c-plane growth front, the facet-growth sector (FGS) in which the GaN grows with {101¯1} facets on the side of the cGS, the boundary region between the cGS and FGS (BR), and the coalescence boundary region between FGSs (CBR). The local current-voltage (I–V) characteristics of the specimen demonstrate space charge limited current conduction and conduction related to band-like trap states associated with TDs in the FGS, BR, and CBR. A detailed analysis of the I–V data indicates that the electrical conduction through TDs in the cGS may proceed via the Poole-Frenkel emission mechanism.

Morphology Of Threading Dislocations In High-Resistivity Gan Films Observed By Transmission Electron Microscopy

Effect of long anneals on the densities of threading dislocations in GaN films grown by metal-organic chemical vapor deposition

Polar Dependence of Threading Dislocation Density in GaN Films Grown by Metal-Organic Chemical Vapor Deposition

The Effect of Coalescence on Threading Dislocations in Gan Films

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

Evolution and Control of Dislocations in Gan Grown on Cone-Patterned Sapphire Substrate by Metal Organic Vapor Phase Epitaxy

Threading Dislocation Reduction in Transit Region of Gan Terahertz Gunn Diodes

Threading Dislocation Density Comparison Between GaN Grown on the Patterned and Conventional Sapphire Substrate by High Resolution X-ray Diffraction

Low Threading Dislocation Density in GaN Films Grown on Patterned Sapphire Substrates

Threading Dislocations in Epitaxial InN Thin Films Grown on (0001) Sapphire with a GaN Buffer Layer

Morphology And Microstructure Evolution Of Alxga1-Xn Epilayers Grown On Gan/Sapphire Templates With Aln Interlayers Observed By Transmission Electron Microscopy

Threading Dislocation Annihilation in the GaN Layer on Cone Patterned Sapphire Substrate

Etch Pits and Threading Dislocations in GaN Films Grown by Metal-Organic Chemical Vapour Deposition

Influence of Threading Dislocations on Physical Properties of GaN Epilayers

Leakage current analysis for dislocations in Na-flux GaN bulk single crystals by conductive atomic force microscopy

X‐Ray Diffraction Microstrain Analysis for Extraction of Threading Dislocation Density of GaN Films Grown on Silicon, Sapphire, and SiC Substrates

Microstructure and Physical Properties of GaN Films on Sapphire Substrates

Study on Threading Dislocations Blocking Mechanism of GaN∕AlxGa1−xN Superlattices

Influence of Different Types of Threading Dislocations on the Carrier Mobility and Photoluminescence in Epitaxial Gan

Influence of Mn-doping on Densities of Screw- and Edge-Type Threading Dislocations in Ga1−xMnxN Grown by Metal Organic Chemical Vapor Deposition

Tem Study of Gan Films on Vicinal Sapphire (0001) Substrates by Mocvd