Abstract:This work assesses the quality of InGaN patterned microstructures grown on GaN‐on‐sapphire to be used as pseudosubstrates for InGaN‐based red micro‐light‐emitting diodes. Using scanning X‐ray diffraction microscopy, the full strain tensor of the microstructures with 60 nm resolution is imaged. The results reveal a promising and surprisingly homogeneous partial release of the compressing strain imposed by the GaN‐on‐sapphire substrate. The technological advancement of mobile devices for virtual and augmented reality requires displays that are faster, more energy‐efficient, and of higher resolution. InxGa1−xN‐based micro‐light‐emitting diodes (LEDs) have the potential to realize such advanced displays thanks to their ability to provide emission of red, green, and blue light simply by tuning the In concentration. However, efficient emission in the red still remains a challenge, as it requires high In contents (≈30–40%) that are unobtainable in InxGa1−xN epitaxial layers pseudomorphically strained to GaN substrates. Research efforts have therefore focused on achieving elastic relaxation of the active InxGa1−xN portion of the LED device to allow greater In incorporation, e.g., through the addition of partially relaxed intermediate InxGa1−xN layers in the heterostructure. Herein, the extent of strain relaxation in InxGa1−xN pseudosubstrates grown on GaN‐on‐sapphire substrates as induced by patterning in mesas 10 μm2 in size is evaluated. Using synchrotron‐based scanning X‐ray diffraction microscopy, the lattice strain and tilt are mapped in a single mesa as well as in an ensemble of mesas with ≈60 nm spatial resolution, demonstrating the effectiveness of the processing route in producing high‐quality, partially relaxed InxGa1−xN pseudosubstrates.

X‐Ray Diffraction Microstrain Analysis for Extraction of Threading Dislocation Density of GaN Films Grown on Silicon, Sapphire, and SiC Substrates

A Comparative Study of Methods for Calculating the Dislocation Density in GaN-on-Si Epitaxial Wafers

Characterization of Crystal Lattice Constant and Dislocation Density of Crack-Free GaN Films Grown on Si(1 1 1)

Structural Properties of GaN(0001) Epitaxial Layers Revealed by High Resolution X-ray Diffraction

Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films

Nanoscale mapping of the full strain tensor, rotation and composition in partially relaxed In$_x$Ga$_{1-x}$N layers by scanning X-ray diffraction microscopy

Strain analysis on Al_xGa_(1-x)N/GaN by high resolution XRD

Strain relaxation in GaN grown on vicinal 4H-SiC(0001) substrates

Thickness Measurement of GaN Films by X-ray Diffraction

Study of Dislocation Densities of Thick GaN Films

Effect of long anneals on the densities of threading dislocations in GaN films grown by metal-organic chemical vapor deposition

Nanoscale Mapping of the Structural Relaxation in Microstructured InxGa1−xN Pseudosubstrates by Scanning X‐ray Diffraction Microscopy

Influence of GaN substrate miscut on the XRD quantification of plastic relaxation in InGaN

A Practical Guide for X-Ray Diffraction Characterization of Ga(Al, In)N Alloys

Microstrain in Al0.22Ga0.78N/GaN heterostructure studied by X-ray diffraction and scattering

Morphology Of Threading Dislocations In High-Resistivity Gan Films Observed By Transmission Electron Microscopy

Etch Pits and Threading Dislocations in GaN Films Grown by Metal-Organic Chemical Vapour Deposition

Necessity of Profile-Fitting when Using X-Ray Diffraction to Analyze GaN Thin Films

Study on the Dislocation of Epitaxial m-GaN Films Revealed by High Resolution X-Ray Diffration

X-ray Characterization of GaN Single Crystal Layers Grown by the Ammonothermal Technique on HVPE GaN Seeds and by the Sublimation Technique on Sapphire Seeds