Abstract:This work presents a systematic study of stress and strain of AlxGa1-xN/AlN with composition ranging from GaN to AlN, grown on a c-plane sapphire by metal-organic chemical vapor deposition, using synchrotron radiation high-resolution X-ray diffraction and reciprocal space mapping. The c-plane of the AlxGa1-xN epitaxial layers exhibits compressive strain, while the a-plane exhibits tensile strain. The biaxial stress and strain are found to increase with increasing Al composition, although the lattice mismatch between the AlxGa1-xN and the buffer layer AlN gets smaller. A reduction in the lateral coherence lengths and an increase in the edge and screw dislocations are seen as the AlxGa1-xN composition is varied from GaN to AlN, exhibiting a clear dependence of the crystal properties of AlxGa1-xN on the Al content. The bandgap of the epitaxial layers is slightly lower than predicted value due to a larger tensile strain effect on the a-axis compared to the compressive strain on the c-axis. Raman characteristics of the AlxGa1-xN samples exhibit a shift in the phonon peaks with the Al composition. The effect of strain is also discussed on the optical phonon energies of the epitaxial layers. The techniques discussed here can be used to study other similar materials.

Microstrain in Al0.22Ga0.78N/GaN heterostructure studied by X-ray diffraction and scattering

Microstrain in Modulation-Doped AlxGa1-xN/GaN Heterostructures

Microstructures And Strain Relaxation In Modulation-Doped Alxga1-Xn/Gan Heterostructures

X-ray Diffraction Studies on AlGaN/GaN Heterostructures

MICROSTRUCTURES AND STRAIN RELAXATION IN MODULATION-DOPED <font>Al</font><sub>x</sub><font>Ga</font><sub>1-x</sub><font>N</font>/<font>GaN</font> HETEROSTRUCTURES

Temperature dependence of strain in A1(X)Ga(1-X)N/GaN heterostructures

Different Strain Relief Behaviors in Al0.35ga0.65n/Gan Multiple Quantum Wells on Gan/Sapphire Templates with Aln/Gan Supperlattices and Low-Temperature Aln Interlayers

Strain-Free Al0.08in0.018ga0.902n/Gan Heterostructure: Combined Rutherford Backscattering/Channeling and High Resolution X-Ray Diffraction

Strain-stress study of AlxGa1-xN/AlN heterostructures on c-plane sapphire and related optical properties

Influence of Ultrathin AlN Interlayer on the Microstructure and the Electrical Transport Properties of AlxGa1−xN/GaN Heterostructures

Temperature-dependent Strain Relaxation of the AlGaN Barrier in AlGaN∕GaN Heterostructures with and Without Si3N4 Surface Passivation

The Effects of Passivation and Temperature on the Barrier Strain of Al0.22Ga0.78N/GaN Heterostructures

Strain analysis on Al_xGa_(1-x)N/GaN by high resolution XRD

Temperature Dependence of Strain in Al0.22Ga0.78N/GaN Heterostructures with and Without Si3N4 Passivation

Strain in Algan Layer Studied by Rutherford Backscattering/Channeling and X-Ray Diffraction

High-Temperature Characteristics of Strain in AlGaN/GaN Heterostructures

Study of the Leakage Current Mechanism in Schottky Contacts to Al0.25Ga0.75N/GaN Heterostructures with AlN Interlayers

Temperature dependence of strain in AlxGa1-xN/GaN heterostructures

Temperature dependence of strain in Al/sub x/Ga/sub 1-x/N/GaN heterostructures

Strain Effect on Photoluminescences from InGaN MQWs with Different Barriers Grown by MOCVD

Influence of Strain Relaxation of the AlxGa1−xN Barrier on Transport Properties of the Two-Dimensional Electron Gas in Modulation-Doped AlxGa1−xN/GaN Heterostructures