Abstract:The effects of interface oxidation on the transport behavior of the 2-D electron gas (2DEG) in AlGaN/GaN heterostructures by plasma-enhanced-atomic-layer-deposited AlN (PEALD-AlN) passivation were investigated using temperature-dependent Hall-effect and X-ray photoelectron spectroscopy (XPS) characterizations. AlGaN/GaN heterostructure with a 4-nm-thick PEALD-AlN passivation exhibits good 2DEG transport behavior and stability at moderately high temperature (e.g., 275 °C). However, serious oxidation of the AlN/GaN (cap layer) interface occurs as the sample is heated up to 400 °C in low-pressure atmosphere, as verified by an increased Ga-O bond in Ga 3d core-level spectra. The oxidation leads to a significant reduction of 2.47 × 1012 cm−2 in the 2DEG density in the channel. A modified AlN passivation structure with Al2O3/AlN (10/4 nm) stack is shown to be able to effectively suppress the oxidation of the AlN/GaN interface, demonstrating an enhanced 2DEG density and high-temperature stability even when the sample is heated up to 500 °C. Based on XPS and 2DEG recovery experiments, it is suggested that acceptor-like deep levels have been generated in the near-surface region of AlGaN/GaN heterostructure because of the oxidation, and trapping of these deep levels results in significant depletion of the 2DEG in the channel. The effects of PEALD-AlN passivation on the strain in the AlGaN barrier of AlGaN/GaN heterostructures are also evaluated with high-resolution X-ray diffraction technique.

The Effects of Passivation and Temperature on the Barrier Strain of Al0.22Ga0.78N/GaN Heterostructures

Temperature Dependence of Strain in Al0.22Ga0.78N/GaN Heterostructures with and Without Si3N4 Passivation

Temperature-dependent Strain Relaxation of the AlGaN Barrier in AlGaN∕GaN Heterostructures with and Without Si3N4 Surface Passivation

TEMPERATURE DEPENDENCE OF RELAXATION IN AlGaN/GaN HETEROSTRUCTURES

Temperature dependence of strain in A1(X)Ga(1-X)N/GaN heterostructures

Influences of AlN passivation dielectric on AlGaN/GaN heterostructure and its high-temperature properties

Influence of Different Surface-Passivation Dielectrics on High-Temperature Strain Relaxation of AlGaN in AlGaN∕GaN Heterostructures

Temperature dependence of strain in Al/sub x/Ga/sub 1-x/N/GaN heterostructures

Effects of an Aln Passivation Layer on the Microstructure and Electronic Properties of Algan/Gan Heterostructures

Temperature dependence of strain in AlxGa1-xN/GaN heterostructures

Thermal Stress Analysis and Structural Design of AlxGa1−xN/GaN Epilayers Based on Si Substrate

High-Temperature Characteristics of Strain in AlGaN/GaN Heterostructures

Effects of Surface/interface Stress on Phonon Properties and Thermal Conductivity in AlN/GaN/AlN Heterostructural Nanofilms

Effects of the passivation of SiNx with various growth stoichiometry on the high temperature transport properties of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures

Microstrain in Al0.22Ga0.78N/GaN heterostructure studied by X-ray diffraction and scattering

Microstructures And Strain Relaxation In Modulation-Doped Alxga1-Xn/Gan Heterostructures

Influence of Ultrathin AlN Interlayer on the Microstructure and the Electrical Transport Properties of AlxGa1−xN/GaN Heterostructures

MICROSTRUCTURES AND STRAIN RELAXATION IN MODULATION-DOPED <font>Al</font><sub>x</sub><font>Ga</font><sub>1-x</sub><font>N</font>/<font>GaN</font> HETEROSTRUCTURES

Different Temperature Dependence of Carrier Transport Properties Between Alxga1-Xn/Inyga1-Yn/Gan and Alxga1-Xn/Gan Heterostructures

Effect of AlN interlayer thickness on leakage currents in Schottky contacts to Alo.25Gao.75N/AlN/GaN heterostructures

Effects of Interface Oxidation on the Transport Behavior of the Two-Dimensional-electron-gas in AlGaN/GaN Heterostructures by Plasma-Enhanced-atomic-layer-deposited AlN Passivation