Abstract:This work presents a systematic study of stress and strain of AlxGa1-xN/AlN with composition ranging from GaN to AlN, grown on a c-plane sapphire by metal-organic chemical vapor deposition, using synchrotron radiation high-resolution X-ray diffraction and reciprocal space mapping. The c-plane of the AlxGa1-xN epitaxial layers exhibits compressive strain, while the a-plane exhibits tensile strain. The biaxial stress and strain are found to increase with increasing Al composition, although the lattice mismatch between the AlxGa1-xN and the buffer layer AlN gets smaller. A reduction in the lateral coherence lengths and an increase in the edge and screw dislocations are seen as the AlxGa1-xN composition is varied from GaN to AlN, exhibiting a clear dependence of the crystal properties of AlxGa1-xN on the Al content. The bandgap of the epitaxial layers is slightly lower than predicted value due to a larger tensile strain effect on the a-axis compared to the compressive strain on the c-axis. Raman characteristics of the AlxGa1-xN samples exhibit a shift in the phonon peaks with the Al composition. The effect of strain is also discussed on the optical phonon energies of the epitaxial layers. The techniques discussed here can be used to study other similar materials.

Temperature dependence of strain in Al/sub x/Ga/sub 1-x/N/GaN heterostructures

Temperature dependence of strain in A1(X)Ga(1-X)N/GaN heterostructures

Temperature dependence of strain in AlxGa1-xN/GaN heterostructures

High-Temperature Characteristics of Strain in AlGaN/GaN Heterostructures

Temperature Dependence of Strain in Al0.22Ga0.78N/GaN Heterostructures with and Without Si3N4 Passivation

Temperature-dependent Strain Relaxation of the AlGaN Barrier in AlGaN∕GaN Heterostructures with and Without Si3N4 Surface Passivation

Molecular dynamics study on the dependence of thermal conductivity on size and strain in GaN nanofilms

Different Temperature Dependence of Carrier Transport Properties Between Alxga1-Xn/Inyga1-Yn/Gan and Alxga1-Xn/Gan Heterostructures

TEMPERATURE DEPENDENCE OF RELAXATION IN AlGaN/GaN HETEROSTRUCTURES

Effects of Surface/interface Stress on Phonon Properties and Thermal Conductivity in AlN/GaN/AlN Heterostructural Nanofilms

Thermal Stress Analysis and Structural Design of AlxGa1−xN/GaN Epilayers Based on Si Substrate

Microstructures And Strain Relaxation In Modulation-Doped Alxga1-Xn/Gan Heterostructures

The Effects of Passivation and Temperature on the Barrier Strain of Al0.22Ga0.78N/GaN Heterostructures

High Temperature Performance of GaN and AlxGa1-xN/GaN Heterostructures

Influence of Different Surface-Passivation Dielectrics on High-Temperature Strain Relaxation of AlGaN in AlGaN∕GaN Heterostructures

High Temperature Performance of GaN and AIxGal-xN/GaN Heterostructures

Temperature dependence of the strain of the AlGaN barrier layer under the gate in AlGaN/AlN/GaN HFETs

MICROSTRUCTURES AND STRAIN RELAXATION IN MODULATION-DOPED <font>Al</font><sub>x</sub><font>Ga</font><sub>1-x</sub><font>N</font>/<font>GaN</font> HETEROSTRUCTURES

Electron-Phonon Coupling and Thermal Transport Properties of GaN/AlGaN Heterojunction under Strain Regulation

Strain-stress study of AlxGa1-xN/AlN heterostructures on c-plane sapphire and related optical properties

Strain Effect on the Phonon Transport Properties of Hydrogenated 2D GaN