Abstract:A finite element model based on coupled field was established to analyze and design high quality GaN epilayers grown on Si substrate with thin variable composition graded Al x Ga 1-x N interlayers. Theoretical simulation shows that Al x Ga 1-x N interlayers can effectively reduce the tensile stress which generated in the cooling process between Si and GaN for thermal mismatch. When the Al x Ga 1-x N is single component, with the proportion of Al is larger, the thermal stress will decrease. In this case, the maximum stress reduces 13.8%, but the distribution uniformity of stress make worse. When the Al x Ga 1-x N is variable composition graded, the stress of GaN epilayers reduced significantly. Further analysis showed that bigger x at the lower interlayer (near the Si substrate) and smaller x at the upper interlayer (near the GaN epilayers) of Al x Ga 1-x N interlayers simultaneous can reduce the risk of cracks and make the GaN quality better. The calculation results show that without considering the effect of thermal mismatch and the lattice mismatch, before the experiments if we carefully design the interlayers structural through finite element model can effectively reduce the residual thermal stress. It is an effective way to save cost and time.

Temperature-dependent Strain Relaxation of the AlGaN Barrier in AlGaN∕GaN Heterostructures with and Without Si3N4 Surface Passivation

Temperature Dependence of Strain in Al0.22Ga0.78N/GaN Heterostructures with and Without Si3N4 Passivation

The Effects of Passivation and Temperature on the Barrier Strain of Al0.22Ga0.78N/GaN Heterostructures

TEMPERATURE DEPENDENCE OF RELAXATION IN AlGaN/GaN HETEROSTRUCTURES

Influence of Different Surface-Passivation Dielectrics on High-Temperature Strain Relaxation of AlGaN in AlGaN∕GaN Heterostructures

Temperature dependence of strain in A1(X)Ga(1-X)N/GaN heterostructures

High-Temperature Characteristics of Strain in AlGaN/GaN Heterostructures

Temperature dependence of strain in AlxGa1-xN/GaN heterostructures

Temperature dependence of strain in Al/sub x/Ga/sub 1-x/N/GaN heterostructures

Influences of AlN passivation dielectric on AlGaN/GaN heterostructure and its high-temperature properties

Thermal Stress Analysis and Structural Design of AlxGa1−xN/GaN Epilayers Based on Si Substrate

Effects of Surface/interface Stress on Phonon Properties and Thermal Conductivity in AlN/GaN/AlN Heterostructural Nanofilms

Microstructures And Strain Relaxation In Modulation-Doped Alxga1-Xn/Gan Heterostructures

Microstrain in Al0.22Ga0.78N/GaN heterostructure studied by X-ray diffraction and scattering

MICROSTRUCTURES AND STRAIN RELAXATION IN MODULATION-DOPED <font>Al</font><sub>x</sub><font>Ga</font><sub>1-x</sub><font>N</font>/<font>GaN</font> HETEROSTRUCTURES

Anisotropic Strain Relaxation and High Quality AlGaN/GaN Heterostructures on Si (110) Substrates

Improved Transport Properties of the Two-Dimensional Electron Gas in AlGaN∕GaN Heterostructures by AlN Surface Passivation Layer

Temperature dependence of the strain of the AlGaN barrier layer under the gate in AlGaN/AlN/GaN HFETs

Effects of the passivation of SiNx with various growth stoichiometry on the high temperature transport properties of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures

Different Strain Relief Behaviors in Al0.35ga0.65n/Gan Multiple Quantum Wells on Gan/Sapphire Templates with Aln/Gan Supperlattices and Low-Temperature Aln Interlayers

Influence of Strain Relaxation of the AlxGa1−xN Barrier on Transport Properties of the Two-Dimensional Electron Gas in Modulation-Doped AlxGa1−xN/GaN Heterostructures