Abstract:A characterization procedure was developed to determine the alloy composition and strain state of Al(x)Ga(1-x)N/GaN(0 < x < 1) heterostructures deposited on c-plane sapphire substrates by low pressure organometalic vapor phase epitaxy. Motivated by a method suggested by Bowen and Tanner for separating the contributions of strain and composition in cubic crystals, we extended the technique to the case of hexagonal crystals by first principles derivation from elastic strain theory. The technique was evaluated using double-axis and triple-axis reciprocal space maps of 200 and 30 nm Al(x)Ga(1-x)N layers. The procedure did not require absolute lattice parameter measurements and relied instead on relative measurements of the layer and substrate peak positions. Symmetric and asymmetric reflections of the film and substrate were measured in the double-axis configuration with omega-2 theta scans. From the peak separation, the strained lattice parameters were determined. Assuming biaxial strain and linear variation of the relaxed lattice parameter with alloy composition, an equation was derived for composition in terms of the strained lattice parameters. The relaxation distribution in the AlGaN was found to be bimodal. Films with mole fraction of Al greater than 0.4 were completely relaxed and thoroughly cracked, while films with mole fraction of Al less than 0.4 exhibited compositionally dependent relaxation about the fully strained state. (C) 2010 American Institute of Physics. [doi:10.1063/1.3457149]

High-Temperature Characteristics of Strain in AlGaN/GaN Heterostructures

Temperature dependence of strain in A1(X)Ga(1-X)N/GaN heterostructures

Temperature dependence of strain in AlxGa1-xN/GaN heterostructures

Temperature dependence of strain in Al/sub x/Ga/sub 1-x/N/GaN heterostructures

Temperature Dependence of Strain in Al0.22Ga0.78N/GaN Heterostructures with and Without Si3N4 Passivation

Temperature-dependent Strain Relaxation of the AlGaN Barrier in AlGaN∕GaN Heterostructures with and Without Si3N4 Surface Passivation

Influence of Different Surface-Passivation Dielectrics on High-Temperature Strain Relaxation of AlGaN in AlGaN∕GaN Heterostructures

TEMPERATURE DEPENDENCE OF RELAXATION IN AlGaN/GaN HETEROSTRUCTURES

High-temperature Transport Properties of 2DEG in AlGaN/GaN Heterostructures

High Temperature Performance of GaN and AlxGa1-xN/GaN Heterostructures

Microstructures And Strain Relaxation In Modulation-Doped Alxga1-Xn/Gan Heterostructures

High Temperature Performance of GaN and AIxGal-xN/GaN Heterostructures

The Effects of Passivation and Temperature on the Barrier Strain of Al0.22Ga0.78N/GaN Heterostructures

Anisotropic Strain Relaxation and High Quality AlGaN/GaN Heterostructures on Si (110) Substrates

Different Temperature Dependence of Carrier Transport Properties Between Alxga1-Xn/Inyga1-Yn/Gan and Alxga1-Xn/Gan Heterostructures

Influences of AlN passivation dielectric on AlGaN/GaN heterostructure and its high-temperature properties

Strain-stress study of AlxGa1-xN/AlN heterostructures on c-plane sapphire and related optical properties

X-ray Characterization of Composition and Relaxation of AlxGa1−xN(≤x≤1) Layers Grown on GaN/sapphire Templates by Low Pressure Organometallic Vapor Phase Epitaxy

Local Strain and Crystalline Defects in GaN/AlGaN/GaN(0001) Heterostructures Induced by Compositionally Graded AlGaN Buried Layers

Different Strain Relief Behaviors in Al0.35ga0.65n/Gan Multiple Quantum Wells on Gan/Sapphire Templates with Aln/Gan Supperlattices and Low-Temperature Aln Interlayers

Strain analysis on Al_xGa_(1-x)N/GaN by high resolution XRD