Abstract:Heterogeneous integration enables high-density integration to improve system functionality, but meanwhile brings reliability concerns due to the intensification of temperature and thermal stress. However, research on thermal stress effects in nanoscale transistors within heterogeneous integrated circuit is still very limited up to now. Multiphysics computation for the heterogeneous integration of nanoscale p-FinFET with GaN high electron mobility transistor (HEMT) on silicon substrate is performed. Firstly, self-heating of GaN HEMT induced thermal stress is simulated. Then, thermal stress effects induced by the GaN HEMT on quantum transport in the FinFET at different locations are compared and analyzed, including the hole effective mass, hole average velocity, on/off-state current, and on-off ratio. Moreover, the impacts of crystal orientation configurations are further discussed. Simulation results show that the impact of thermal stress on FinFET is highly dependent on the Si crystal orientation and its location relative to GaN HEMT. Taking the FinFET with (001)/[110] confinement/transport orientation, which is at a distance of R FET and an angle of φ from the GaN HEMT as an example, thermal stress induces the significant reductions in I on and I off of FinFET at φ = π/2 and φ = 3π/2, and the increases of I on and I off in FinFET at φ = 0 and φ = π, but has small impact on FinFETs located diagonally to the GaN HEMT.

Effects of Surface/interface Stress on Phonon Properties and Thermal Conductivity in AlN/GaN/AlN Heterostructural Nanofilms

Influence of Surface/interface Stress on Thermal Conductivity of Stressed GaN Nanofilms

Effects Of Surface Stress On The Phonon Properties In Gan Nanofilms

Phonon Properties and Thermal Conductivity of GaN Nanofilm under Prestress and Surface/interface Stress

Effects of Heterogeneity and Prestress Field on Phonon Properties of Semiconductor Nanofilms

Simulating Stress-Tunable Phonon and Thermal Properties in Heterostructured AlN/GaN/AlN-nanofilms

Influence of Prestress Fields on the Phonon Thermal Conductivity of GaN Nanostructures

Effects of Pre-Stress and Surface Stress on Phonon Thermal Conductivity of Rectangular Si Nanowires

Effect of Stress-Dependent Thermal Conductivity on Thermo-Mechanical Coupling Behavior in GaN-Based Nanofilm under Pulse Heat Source

Molecular dynamics study on the dependence of thermal conductivity on size and strain in GaN nanofilms

Modification of the phonon thermal conductivity in spatially confined semiconductor nanofilms under stress fields

On the Role of Piezoelectricity in Phonon Properties and Thermal Conductivity of GaN Nanofilms

Modeling Phonon Thermal Conductivity in Spatially Confined GaN Nanofilms under Stress Fields and Phonon Surface Scattering

Stress field effects on phonon properties in spatially confined semiconductor nanostructures

First-principles Study of Size Effects on Electrical Properties of AlN/GaN Heterostructured Nanofilms

Thermal Stress Analysis and Structural Design of AlxGa1−xN/GaN Epilayers Based on Si Substrate

Effect of Stress on Thermal Properties of AlGaN Nanofilms

Effects of Surface Charges on Phonon Properties and Thermal Conductivity in GaN Nanofilms

Electron–acoustic Phonon Interaction and Mobility in Stressed Rectangular Silicon Nanowires

Strain/Stress-Engineering in Phonon Properties of Streesed Semiconductor Nanowires

Multiphysics Simulation Study of Thermal Stress Effects in Nanoscale FinFETs Heterogeneously Integrated with GaN High-Power Device on Silicon Substrate