First-principles Study of Size Effects on Electrical Properties of AlN/GaN Heterostructured Nanofilms

Ying Tang,Zekun Ren,Qianjin Lei,Yajun Zhang,Linli Zhu

DOI: https://doi.org/10.1016/j.commatsci.2023.112118

IF: 3.572

2023-01-01

Computational Materials Science

Abstract:GaN-based heterostructures and their electrical properties play a crucial role in micro- and nanoelectronic device applications. In this work, the size-dependent electrical properties of wurtzite AlN/GaN heterostructured nanofilms are investigated by using the first-principles simulations. The electronic structures of 1.4 nm/1.4 nm, 1.8 nm/1.8 nm, 2.2 nm/2.2 nm, 2.6 nm/2.6 nm AlN/GaN heterostructured nanofilms are systemically analyzed. The simulations demonstrated that the surface and interface enable to affect the electron density of states of AlN/ GaN nanofilms, and the potential well at the valence band of the AlN intermediate layer increases with increasing nanofilm thickness. The electrical conductivity of AlN/GaN nanofilms increases significantly with increasing the thickness from 2.8 nm to 4.4 nm, and the conductivity values stabilize from 4.4 nm to 5.2 nm. Therefore, it can be concluded that the size dependence of the conductivity becomes weaker with increasing the nanofilm thickness. The results of this work could be useful for realizing the tuning of electrical properties of AlN/GaN heterostructured nanofilms through the size effects and surface/interface engineering.