Abstract:Rare-earth (RE) elements doped III-nitride semiconductors have garnered attention for their potential in advanced high-frequency and high-power electronic applications. We report on the molecular beam epitaxy of quaternary alloy ScAlInN, which is an encouraging strategy to improve the heterointerface quality when grown at relatively low temperatures. Monocrystalline wurtzite phase and uniform domain structures are achieved in ScAlInN/GaN heterostructures, featuring atomically sharp interface. ScAlInN (the Sc content in the ScAlN fraction is 14%) films with lower In contents (less than 6%) are nearly lattice matched to GaN, exhibiting negligible in-plane strain, which are excellent barrier layer candidates for GaN high electron mobility transistors (HEMTs). Using a 15-nm-thick Sc0.13Al0.83In0.04N as a barrier layer in GaN HEMT, a two-dimensional electron gas density of 4.00 x 10(13) cm(-2) and a Hall mobility of 928 cm(2)/V s, with a corresponding sheet resistance of 169 Omega/square, have been achieved. This work underscores the potential of alloy engineering to adjust lattice parameters, bandgap, polarization, interfaces, and strain in emerging RE-III-nitrides, paving the way for their use in next-generation optoelectronic, electronic, acoustic, and ferroelectric applications.

Enhanced Transport Properties In Inalgan/Aln/Gan Heterostructures On Si (111) Substrates: The Role Of Interface Quality

Growth of Ingan and Double Heterojunction Structure with Ingan Back Barrier

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

Influence of Ultrathin AlN Interlayer on the Microstructure and the Electrical Transport Properties of AlxGa1−xN/GaN Heterostructures

Different Temperature Dependence of Carrier Transport Properties Between Alxga1-Xn/Inyga1-Yn/Gan and Alxga1-Xn/Gan Heterostructures

Effects of AlN and AlGaN interlayer on properties of InAlN/GaN heterostructures

High Mobility Algan/Gan Heterostructures Grown on Si Substrates Using A Large Lattice-Mismatch Induced Stress Control Technology

Magnetotransport Properties of High Equivalent Al Composition AlGaN/GaN Heterostructures Using AlN/GaN Superlattice As a Barrier

Improved Transport Properties of the Two-Dimensional Electron Gas in AlGaN∕GaN Heterostructures by AlN Surface Passivation Layer

Ni Diffusion and Its Influence on Electrical Properties of AlxGa1−xN∕GaN Heterostructures

High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures

Studies on the InAlN/InGaN/InAlN/InGaN Double Channel Heterostructures with Low Sheet Resistance

Growth of high quality and uniformity AlGaN/GaN heterostructures on Si substrates using a single AlGaN layer with low Al composition

Electron Mobility Exceeding 10(4) Cm(2)/Vs In An Algan-Gan Heterostructure Grown On A Sapphire Substrate

Interfaces in heterostructures of AlInGaN/GaN/ Al2O3

ScAlInN/GaN Heterostructures Grown by Molecular Beam Epitaxy

Study On The Subband Properties Of Alxga1-X/Gan Modulation-Doped Heterostructures

AlGaN/GaN heterostructure on Si (111) substrate grown by MOCVD

Effects of an Aln Passivation Layer on the Microstructure and Electronic Properties of Algan/Gan Heterostructures

Electrical Properties of GaN-based Heterostructures Adopting InAlN/AlGaN Bilayer Barriers

Charge and Mobility Enhancements in In-Polar InAl(Ga)N/Al(Ga)N/GaN Heterojunctions Grown by Metal–Organic Chemical Vapor Deposition Using a Graded Growth Strategy