Abstract:In this study, the growth of a high-quality AlGaN/GaN high electron mobility transistor (HEMT) heterostructure on silicon (Si) by metal-organic chemical vapor deposition (MOCVD) was investigated by utilizing the both AlN/GaN superlattice (SL) and Al0.07Ga0.93N back barrier (BB) techniques. Atomic force microscope (AFM) and high-resolution x-ray diffractometer (HR-XRD) confirm low surface roughness of 0.26 – 0.34 nm and the formation of high-quality AlN/GaN SL and GaN channel. The AlGaN/GaN heterostructures exhibit high electron mobility of up to 1700 cm2/V∙s and high carrier concentration density of (1.02 – 1.06 × 1013 cm-2) for both heterostructures. The AlGaN/GaN HEMT devices demonstrate low specific contact resistivity (c) of 2.7 × 10-6 Ω·cm2 and low contact resistance (RC) of 0.3 Ω·mm for the heterostructure with BB layer. Furthermore, the DC characteristics demonstrate that incorporating Al0.07Ga0.93N BB in the heterostructure results in a 19.2% increase in lateral breakdown voltage (with a 10 μm spacing) and a 27.5% increase in vertical breakdown voltage (at 1 mA/cm2), compared to the heterostructure without Al0.07Ga0.93N BB within the AlN/GaN SL structure. Moreover, improvement of 10.6% in maximum saturation current (IDS) and 15.2% in on-resistance (RON)has been for the device fabricated on Al0.07Ga0.93N BB structure. The insertion loss of the buffer layer improves to –1.40 dB/mm at 40 GHz. Consequently, the proposed heterostructure investigated in this study demonstrates suitability for electronic device applications.

Studies on the InAlN/InGaN/InAlN/InGaN Double Channel Heterostructures with Low Sheet Resistance

Growth of Ingan and Double Heterojunction Structure with Ingan Back Barrier

High Electron Mobility And Low Sheet Resistance In Lattice-Matched Alinn/Aln/Gan/Aln/Gan Double-Channel Heterostructure

Highly uniform sheet resistance of the double-channel AlInN/GaN heterostructure

Effects of Channel Thickness on Structure and Transport Properties of AlGaN/InGaN Heterostructures Grown by Pulsed Metal Organic Chemical Vapor Deposition

Lattice-matched AlInN/GaN multi-channel heterostructure and HEMTs with low on-resistance

Enhanced Transport Properties In Inalgan/Aln/Gan Heterostructures On Si (111) Substrates: The Role Of Interface Quality

Effects of AlN and AlGaN interlayer on properties of InAlN/GaN heterostructures

Influence of Ultrathin AlN Interlayer on the Microstructure and the Electrical Transport Properties of AlxGa1−xN/GaN Heterostructures

Study of the Leakage Current Mechanism in Schottky Contacts to Al0.25Ga0.75N/GaN Heterostructures with AlN Interlayers

High density polarization-induced 2D hole gas enabled by elevating Al composition in GaN/AlGaN heterostructures

Different Temperature Dependence of Carrier Transport Properties Between Alxga1-Xn/Inyga1-Yn/Gan and Alxga1-Xn/Gan Heterostructures

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

High-performance InAlGaN/GaN Enhancement-Mode MOS-HEMTs Grown by Pulsed Metal Organic Chemical Vapor Deposition

High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures

Magnetotransport Properties of High Equivalent Al Composition AlGaN/GaN Heterostructures Using AlN/GaN Superlattice As a Barrier

Low contact resistance and high breakdown voltage of AlGaN/GaN HEMT grown on silicon using both AlN/GaN superlattice and Al0.07Ga0.93N back barrier layer

Electrical Properties of GaN-based Heterostructures Adopting InAlN/AlGaN Bilayer Barriers

Growth of high quality and uniformity AlGaN/GaN heterostructures on Si substrates using a single AlGaN layer with low Al composition

Design and material growth of AlGaN-channel two-dimensional-electron gas heterostructures employing strain-controlled quaternary AlGaInN barrier layers

Effect of InGaN Channel on Radio‐Frequency Performance in High‐Electron‐Mobility Transistors with an InAlGaN Barrier