Abstract:This research explores the architecture and efficacy of GaN/AlxGa1−xN-based heterojunction phototransistors (HPTs) engineered with both a compositionally graded and a doping-graded base. Employing theoretical analysis along with empirical fabrication techniques, HPTs configured with an aluminum compositionally graded base were observed to exhibit a substantial enhancement in current gain. Specifically, theoretical models predicted a 12-fold increase, while experimental evaluations revealed an even more pronounced improvement of approximately 27.9 times compared to conventional GaN base structures. Similarly, HPTs incorporating a doping-graded base demonstrated significant gains, with theoretical predictions indicating a doubling of current gain and experimental assessments showing a 6.1-fold increase. The doping-graded base implements a strategic modulation of hole concentration, ranging from 3.8 × 1016 cm−3 at the base–emitter interface to 3.8 × 1017 cm−3 at the base–collector junction. This controlled gradation markedly contributes to the observed enhancements in current gain. The principal mechanism driving these improvements is identified as the increased electron drift within the base, propelled by the intrinsic electric field inherent to both the compositionally and doping-graded structures. These results highlight the potential of such graded base designs in enhancing the performance of GaN/AlxGa1−xN HPTs and provide crucial insights for the advancement of future phototransistor technologies.

Charge and Mobility Enhancements in In-Polar InAl(Ga)N/Al(Ga)N/GaN Heterojunctions Grown by Metal–Organic Chemical Vapor Deposition Using a Graded Growth Strategy

Growth of Ingan and Double Heterojunction Structure with Ingan Back Barrier

Enhanced Transport Properties In Inalgan/Aln/Gan Heterostructures On Si (111) Substrates: The Role Of Interface Quality

Influence of Ultrathin AlN Interlayer on the Microstructure and the Electrical Transport Properties of AlxGa1−xN/GaN Heterostructures

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

Ni Diffusion and Its Influence on Electrical Properties of AlxGa1−xN∕GaN Heterostructures

Unintentional gallium incorporation in AlN and its impact on the electrical properties of GaN/AlN and GaN/AlN/AlGaN heterostructures

Different Temperature Dependence of Carrier Transport Properties Between Alxga1-Xn/Inyga1-Yn/Gan and Alxga1-Xn/Gan Heterostructures

Controlling a three dimensional electron slab of graded Al$_{x}$Ga$_{1-x}$N

Effects of AlN and AlGaN interlayer on properties of InAlN/GaN heterostructures

Growth and Characterization of Modulation-Doped Alxga1-Xn/Gan Heterostructures

Improved Transport Properties of the Two-Dimensional Electron Gas in AlGaN∕GaN Heterostructures by AlN Surface Passivation Layer

Impact of composition and thickness of step-graded AlGaN barrier in AlGaN/GaN heterostructures

High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures

Investigation into the Energy Band Diagram and Charge Distribution in AlGaN/GaN Double Heterostructures by Self-Consistent Poisson–Schrödinger Calculations

Electron Mobility Exceeding 10(4) Cm(2)/Vs In An Algan-Gan Heterostructure Grown On A Sapphire Substrate

High Mobility Algan/Gan Heterostructures Grown on Si Substrates Using A Large Lattice-Mismatch Induced Stress Control Technology

Magnetotransport Properties of High Equivalent Al Composition AlGaN/GaN Heterostructures Using AlN/GaN Superlattice As a Barrier

Interface Charge Engineering in Down-Scaled AlGaN (<6 Nm)/gan Heterostructure for Fabrication of GaN-based Power HEMTs and MIS-HEMTs

Enhancing GaN/AlxGa1−xN-Based Heterojunction Phototransistors: The Role of Graded Base Structures in Performance Improvement

Influence of Polarization Effects on the Energy Band of AlGaN/GaN/AlGaN Heterostructures