Abstract:The emerging ultrawide-bandgap AlGaN alloy system holds promise for the development of advanced materials in the next generation of power semiconductor and UV optoelectronic devices. Within this context, heterostructures based on III-nitrides are very popular in view of their applications as electronics and optoelectronics components. AlGaN-based deep UV emitters are gaining visibility for their disinfection capabilities. Likewise, high electron mobility transistors are attracting increasing attention owing to their superior electron transport which yields high-speed and high-power applications. Those devices are conventionally made of AlGaN/GaN heterostructures grown on foreign substrate. However, structural defects, including stress induced by a mismatch in unit cell parameters and the presence of dislocations, can not only decrease the efficiency of the light emitters (by facilitating the non-radiative recombination of electron-hole pairs), it also impede electron mobility within the two-dimensional electron gas at the AlGaN/GaN interface. Therefore, the significance of obtaining high-quality AlGaN layers becomes evident. Including a thin AlN interlayer between the GaN buffer layer and AlGaN is a possible answer to address these drawbacks. Not only do we show that a thin AlN layer, approximately ≤ 3 nm in thickness, between the GaN buffer and AlGaN layers, is effective in decreasing the dislocation densities in the AlGaN layer by around 30%. Still, this is responsible of an increase in the electron mobility (approximately 33%) compared to a classical AlGaN/GaN heterostructure. Additionally, the resulting heterostructure exhibits better optical quality, with a 7-fold increase in intensity as well as a 20% reduction in full-width at half-maximum in the AlGaN emission.

Unintentional gallium incorporation in AlN and its impact on the electrical properties of GaN/AlN and GaN/AlN/AlGaN heterostructures

Influence of Ultrathin AlN Interlayer on the Microstructure and the Electrical Transport Properties of AlxGa1−xN/GaN Heterostructures

The Influence of 1nm AlN Interlayer on Properties of the Al0.3Ga0.7N/AlN/GaN HEMT Structure

Effects of AlN and AlGaN interlayer on properties of InAlN/GaN heterostructures

Effect of the Alloyed Interlayer on the Thermal Conductance of Al/GaN Interface

Transport Properties of InGaN Channel-Based Heterostructures with GaN Interlayers

Ni Diffusion and Its Influence on Electrical Properties of AlxGa1−xN∕GaN Heterostructures

The Influence of AlN Interlayers on the Microstructural and Electrical Properties of P -Type AlGaN/GaN Superlattices Grown on GaN/sapphire Templates

Effect of AlN interlayer thickness on leakage currents in Schottky contacts to Alo.25Gao.75N/AlN/GaN heterostructures

Study of the Leakage Current Mechanism in Schottky Contacts to Al0.25Ga0.75N/GaN Heterostructures with AlN Interlayers

High-resistivity Unintentionally Carbon-Doped GaN Layers with Nitrogen As Nucleation Layer Carrier Gas Grown by Metal-Organic Chemical Vapor Deposition

Different Temperature Dependence of Carrier Transport Properties Between Alxga1-Xn/Inyga1-Yn/Gan and Alxga1-Xn/Gan Heterostructures

Al Incorporation, Structural and Optical Properties of AlxGa1−xN (0.13⩽x⩽0.8) Alloys Grown by MOCVD

AlN interlayer-induced reduction of dislocation density in the AlGaN epilayer

Enhanced Transport Properties In Inalgan/Aln/Gan Heterostructures On Si (111) Substrates: The Role Of Interface Quality

Charge and Mobility Enhancements in In-Polar InAl(Ga)N/Al(Ga)N/GaN Heterojunctions Grown by Metal–Organic Chemical Vapor Deposition Using a Graded Growth Strategy

Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD)

Heat transfer enhancement of N-Ga-Al semiconductors heterogeneous interfaces

Two Dimensional Electron Gas In Gan Heterojunction Field Effect Transistors Structures With Aln Spacer

High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures